| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Genera | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features •Fast:optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistribution andhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recovery | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
OPTIMIZEDFORMEDIUMOPERATING | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.66V,@Vge=15V,Ic=9.0A) Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage •Lead-Free Benef | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedfor highoperatingfrequencies>5.0kHz,andShort CircuitRatedto10μs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXF | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAGASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A) ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A) ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULRTAFASTSOFRRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMul | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2017+ |
TO-220 |
35689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
IR |
TO-220 |
10265 |
提供BOM表配单只做原装货值得信赖 |
询价 | |||
IR |
21+ROHS |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
22+ |
NA |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
2023+ |
TO-220 |
5185 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
23+ |
NA |
8000 |
只做原装现货 |
询价 | ||
IR |
05+ |
TO-220 |
21 |
询价 | |||
23+ |
N/A |
85600 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
IR |
2023+环保现货 |
TO220 |
10 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 |
相关规格书
更多- G569C
- GAL16LV8C-10LJ
- GAL16LV8C-7LJ
- GAL16LV8D-5LJ
- GAL16V8-15LP
- GAL16V8-25LVC
- GAL16V8A-15LNC
- GAL16V8A-25LP
- GAL16V8B-10LJ
- GAL16V8B-15LJ
- GAL16V8B-15QJ
- GAL16V8B-25LJ
- GAL16V8B-25QP
- GAL16V8B-7LP
- GAL16V8C-7LJ
- GAL16V8D-10LJ
- GAL16V8D-15LD_883
- GAL16V8D-15LJ
- GAL16V8D-15LP
- GAL16V8D-15QJ
- GAL16V8D-20QPI
- GAL16V8D-25LJI
- GAL16V8D-25LPI
- GAL16V8D-25QJI
- GAL16V8D-3LJ
- GAL16V8D-5LJ
- GAL16V8D-7LJ
- GAL18V10B-15LJ
- GAL20V8-25LNC
- GAL20V8A-15LP
- GAL20V8A-25LP
- GAL20V8B-10LJ
- GAL20V8B-15LD_883
- GAL20V8B-15LP
- GAL20V8B-15QJ
- GAL20V8B-25LP
- GAL20V8B-25QJ
- GAL20V8B-7LJ
- GAL20V8C-10LJ
- GAL20V8C-7LJ
- GAL22V10-15LP
- GAL22V10B
- GAL22V10B-10LP
- GAL22V10B-15LP
- GAL22V10B-25LP
相关库存
更多- G65SC151PEI-1
- GAL16LV8C-15LJ
- GAL16LV8D-3LJ
- GAL16V8
- GAL16V8-25LNC
- GAL16V8A-10LP
- GAL16V8A-15LP
- GAL16V8B
- GAL16V8B-10LP
- GAL16V8B-15LP
- GAL16V8B-15QP
- GAL16V8B-25LP
- GAL16V8B-7LJ
- GAL16V8C-15LJ
- GAL16V8D
- GAL16V8D-10LP
- GAL16V8D15LJ
- GAL16V8D-15LJI
- GAL16V8D-15LPI
- GAL16V8D-15QP
- GAL16V8D-25LJ
- GAL16V8D-25LP
- GAL16V8D-25QJ
- GAL16V8D-25QP
- GAL16V8D5LJ
- GAL16V8D7LJ
- GAL16V8D-7LP
- GAL18V10B-15LP
- GAL20V8A-15LNC
- GAL20V8A-25LJ
- GAL20V8B
- GAL20V8B-10LP
- GAL20V8B-15LJ
- GAL20V8B-15LPI
- GAL20V8B-25LJ
- GAL20V8B-25LPI
- GAL20V8B-25QP
- GAL20V8B-7LP
- GAL20V8C-5LJ
- GAL22LV10C-10LJ
- GAL22V10-25LP
- GAL22V10B-10LJ
- GAL22V10B-15LJ
- GAL22V10B-25LJ
- GAL22V10C
