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IXFE44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •Fastin

IXYS

IXYS Integrated Circuits Division

IXFK44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFK44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFL44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Integrated Circuits Division

IXFN44N60

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwit

IXYS

IXYS Integrated Circuits Division

IXFR44N60

HiPerFETTMPowerMOSFETsISOPLUS247

IXYS

IXYS Integrated Circuits Division

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFX44N60

HiPerFETPowerMOSFETs

HiPerFETTMSingleMOSFETDie PowerMOSFETs Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier

IXYS

IXYS Integrated Circuits Division

IXFX44N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.13Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MS44N60T

LowrDS(on)trenchtechnology

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
23+
TO-247
10000
公司只做原装正品
询价
FAIRCHILD/仙童
22+
TO-247
6000
十年配单,只做原装
询价
FAIRCHILD/仙童
22+
TO-247
25000
只做原装进口现货,专注配单
询价
ON-安森美
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
FAIRCHILD
24+
TO-247
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
22+
LLP8
3629
原装优势!房间现货!欢迎来电!
询价
原装GC
2023+
SOT-23
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
原装GC
23+
SOT-23
5000
专注配单,只做原装进口现货
询价
MATROK
2022+
BGA
5000
全现原装公司现货
询价
23+
N/A
35800
正品授权货源可靠
询价
更多G44N60RUFD供应商 更新时间2024-4-30 14:30:00