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FSPYE230R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSGS230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSGYE230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFET

IntersilStar*PowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. Star*PowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL230R4

5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPL230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPS230R4

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*Power™RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS230R4

8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FSPYE230R4

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
F
05+
原厂原装
4293
只做全新原装真实现货供应
询价
F
23+
65480
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
2016+
DIP8
6528
只做原装正品现货!或订货
询价
FSC
2016+
DIP8
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
FSC
2017+
DIP8
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FSC
2022+
DIP8
5000
只做原装公司现货
询价
23+
N/A
64610
正品授权货源可靠
询价
FAIRCHILD
23+
DIP-8
66800
只上传原装现货
询价
FSC
2020+
DIP8
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多FSPYE230R4供应商 更新时间2024-4-29 15:41:00