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FSGYE230R4规格书详情
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for SEE (Single Event Effects)
which the Intersil FS families have always featured.
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80 of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV, or Space
equivalent of MIL-S-19500.
Formerly available as type TA45230W.
Features
• 12A, 200V, rDS(ON) = 0.150Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80 of Rated Breakdown and
VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
产品属性
- 型号:
FSGYE230R4
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
90550 |
正品授权货源可靠 |
询价 | |||
NEC |
21+ROHS |
TO-220F |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NIEC |
23+ |
TO220F |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
NIEC |
2048+ |
TO-220F-2 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
1846+ |
9000 |
原装现货!随时可以看货!一片起卖! |
询价 | ||||
NIEC |
23+ |
NA/ |
27 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RECTRON |
05+ |
原厂原装 |
33716 |
只做全新原装真实现货供应 |
询价 | ||
新电源 |
2020+ |
TO220F- |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
NIEC |
22+ |
TO220 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
SHINDENGEN/新电元 |
22+ |
TO220F-2 |
50000 |
只做原装假一罚十,欢迎咨询 |
询价 |