首页>FSGYC260D1>规格书详情
FSGYC260D1中文资料PDF规格书
FSGYC260D1规格书详情
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
Features
• 56A, 200V, rDS(ON) = 0.033Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 17nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
产品属性
- 型号:
FSGYC260D1
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NIEC |
23+ |
NA/ |
27 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NIEC |
05+ |
TO220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NIEC |
23+ |
TO-220F |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ISL |
23+ |
65480 |
询价 | ||||
NIEC |
08+(pbfree) |
TO-220F-2pin |
8866 |
询价 | |||
NIEC |
2048+ |
TO-220F-2 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
NIEC |
TO-220F |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
NIEC |
24+25+/26+27+ |
TO-220-3 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
21+ROHS |
TO-220F |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
NIEC |
17+ |
TO-220F |
6200 |
询价 |