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EMB16N06A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06CS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06G

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID6.7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06H

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06V

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FTP16N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

未分类制造商

NP16N06QLK

DualN-channelPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP16N06YLL

60V??16A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

PJD16N06A

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJD16N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

RFD16N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LE

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06SM

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FRD16N06

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
harris
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
Harris Corporation
2022+
-
6680
原厂原装,欢迎咨询
询价
ST
23+
NA
16900
支持样品,原装现货,提供技术支持!
询价
ST
22+
原厂原封
10000
正规渠道,只有原装!
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
ST
22+
原厂原封
16900
支持样品 原装现货 提供技术支持!
询价
SANREX
18+
MODULE
2176
公司大量现货 随时可以发货
询价
IPD
2021+
模块
6430
原装现货/欢迎来电咨询
询价
IPD
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IPD
2018
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
更多FRD16N06供应商 更新时间2024-5-3 10:06:00