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HFG1N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFU1N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXTA1N80

HighVoltageMOSFET

IXYS

IXYS Integrated Circuits Division

IXTA1N80P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTP1N80

HighVoltageMOSFET

IXYS

IXYS Integrated Circuits Division

IXTP1N80P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTU1N80P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTY1N80

HighVoltageMOSFET

IXYS

IXYS Integrated Circuits Division

IXTY1N80P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

KSMD1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托罗拉

MTP1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHMS

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托罗拉

MTP1N80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PJP1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES •1A,800V,RDS(ON)=16Ω@VGS=10V,ID=0.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJU1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES •1A,800V,RDS(ON)=16Ω@VGS=10V,ID=0.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

SSF1N80D

MainProductCharacteristics

SILIKRONSilikron Semiconductor Co.,LTD.

Silikron Semiconductor Co.,LTD.

SW1N80A

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

SWC1N80A

N-channelMOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

详细参数

  • 型号:

    FQT1N80TF

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Fairchild Semiconductor Corporation

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
2024+实力库存
SOT-223
250
只做原厂渠道 可追溯货源
询价
ON/安森美
20+
SOT-223
120000
原装正品 可含税交易
询价
ON/安森美
SOT223
7906200
询价
FSC
1844+
SOT223
9852
只做原装正品假一赔十为客户做到零风险!!
询价
安森美
2002
SOP8
65000
原装正品假一罚万
询价
仙童
14+PBF
SOT-223
1500
现货
询价
FAIRCHILD
21+
SOT-223
1700
原装现货假一赔十
询价
FAIRCHILD/仙童
19+PBF
SOT-223
2589
就找我吧!--邀您体验愉快问购元件!
询价
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
FAIRCHILD/仙童
23+
SOT223
50000
全新原装正品现货,支持订货
询价
更多FQT1N80TF供应商 更新时间2024-6-15 16:36:00