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FQU2N100TU	文件：2.062929 Mbytes Page：9 Pages	N-Channel QFET짰 MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
AOD2N100	文件：321.33 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOD2N100	文件：2.62559 Mbytes Page：6 Pages	1000V,2AN-ChannelMOSFET	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
FQD2N100	文件：353.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):9Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD2N100	文件：736.58 Kbytes Page：9 Pages	1000VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD2N100	文件：622.34 Kbytes Page：9 Pages	1000VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD2N100	文件：2.062929 Mbytes Page：9 Pages	N-ChannelQFET짰MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD2N100TM	文件：736.58 Kbytes Page：9 Pages	1000VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU2N100	文件：622.34 Kbytes Page：9 Pages	1000VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU2N100	文件：736.58 Kbytes Page：9 Pages	1000VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU2N100	文件：2.062929 Mbytes Page：9 Pages	N-ChannelQFET짰MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU2N100	文件：330.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXGP2N100	文件：85.86 Kbytes Page：2 Pages	HighVoltageIGBT	IXYS IXYS Integrated Circuits Division	IXYS
IXGP2N100A	文件：85.86 Kbytes Page：2 Pages	HighVoltageIGBT	IXYS IXYS Integrated Circuits Division	IXYS
IXTA2N100	文件：294.47 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTA2N100	文件：152.49 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRated HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance(	IXYS IXYS Integrated Circuits Division	IXYS
IXTA2N100P	文件：298.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTA2N100P	文件：153.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRated PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications:	IXYS IXYS Integrated Circuits Division	IXYS
IXTP2N100	文件：294.43 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mod	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTP2N100	文件：152.49 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRated HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance(	IXYS IXYS Integrated Circuits Division	IXYS

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详细参数

型号：
FQU2N100TU
功能描述：
MOSFET 1000V/1.6A/N-CH
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	FQU2N100TU	onsemi	24+	I-PAK	30000	晶体管-分立半导体产品-原装正品	询价
深圳市鸿昌盛电子科技有限公司	FQU2N100TU		2015+		42000	公司现货库存	询价
深圳市坤融电子科技有限公司	FQU2N100TU	FAIRCHILD/仙童	2024+实力库存	TO-251	28260	只做原厂渠道可追溯货源	询价
深圳市润联芯城科技有限公司	FQU2N100TU	仙童	12+	TO-251	25200	只做原装正品	询价
深圳市高捷芯城科技有限公司	FQU2N100TU	onsemi(安森美)	23+	TO-251-3	11346	支持大陆交货,美金交易。原装现货库存。	询价
深圳市鹏和科技有限公司	FQU2N100TU	FSC	24+	TO-251	5000	只做原装公司现货	询价
深圳市达恩科技有限公司	FQU2N100TU	ONSemiconductor	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市鼎盛源芯科技有限公司	FQU2N100TU	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市百视威讯电子科技有限公司	FQU2N100TU		23+	N/A	46480	正品授权货源可靠	询价
深圳市纳立科技有限公司	FQU2N100TU		三年内		1983	纳立只做原装正品13590203865	询价

更多FQU2N100TU供应商更新时间2024-5-21 14:14:00

详细参数

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