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5N120	文件：451.43 Kbytes Page：7 Pages	5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A LowReverseTransferCapacitance *FastSwitchingCapabilit	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP5N120BN	文件：82.52 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTs TheHGTP5N120BNandtheHGT1S5N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateco	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120BND	文件：89.22 Kbytes Page：7 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120BND	文件：216.81 Kbytes Page：8 Pages	21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP5N120CN	文件：80.54 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBT TheHGTP5N120CNandHGT1S5N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP5N120CND	文件：87.09 Kbytes Page：7 Pages	25A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG5N120CND,HGTP5N120CNDandHGT1S5N120CNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
SGH5N120RUF	文件：464.69 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswhe	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH5N120RUFD	文件：513.9 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
STP5N120	文件：186.55 Kbytes Page：10 Pages	N-channel1200V-2.8廓-4.4A-TO-220Zener-protectedSuperMESHTMPowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP5N120	文件：296.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
UG5N120	文件：288.53 Kbytes Page：3 Pages	NPTN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODES	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华斯顿科技有限公司	FQP5N120BND	FSC原装	22+23+	TO-247	23777	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	FQP5N120BND	FSC原装	19+	TO-247	9860	一级代理	询价
深圳市百视威讯电子科技有限公司	FQP5N120BND		23+	N/A	46180	正品授权货源可靠	询价
深圳市纳艾斯科技有限公司	FQP5N120BND	FSC	2020+	TO-247	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市航润创能电子集团有限公司	FQP5N120BND	FSC	21+	TO-247	30	原装现货假一赔十	询价
深圳市振芯物联科技有限公司	FQP5N120BND	FSC	22+	TO-247	32350	原装正品假一罚十公司现货	询价
深圳市威尔健半导体有限公司	FQP5N120BND	FAIRCHILD/仙童	23+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	FQP5N120BND	FSC	21+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	FQP5N120BND	FAIRCHILD/仙童	2022	TO-247	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市鹏锦翔科技有限公司二部	FQP5N120BND	FSC	19+ 20+	TO-247	32350	深圳存库原装现货	询价

更多FQP5N120BND供应商更新时间2024-4-30 16:50:00

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