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AOD2N100

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD2N100

1000V,2AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

FQD2N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):9Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD2N100

N-ChannelQFET짰MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD2N100TM

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N100

N-ChannelQFET짰MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQU2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU2N100TU

N-ChannelQFET짰MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXGP2N100

HighVoltageIGBT

IXYS

IXYS Integrated Circuits Division

IXGP2N100A

HighVoltageIGBT

IXYS

IXYS Integrated Circuits Division

IXTA2N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance(

IXYS

IXYS Integrated Circuits Division

IXTA2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications:

IXYS

IXYS Integrated Circuits Division

IXTP2N100

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤7Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance(

IXYS

IXYS Integrated Circuits Division

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
11+
TO252
60
就找我吧!--邀您体验愉快问购元件!
询价
FAIRCHILD/仙童
23+
TO-252(DPAK)
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022
TO-252(DPAK)
80000
原装现货,OEM渠道,欢迎咨询
询价
FAIRCHILD/仙童
21+
TO-252(DPAK)
9852
只做原装正品现货!或订货假一赔十!
询价
FAIRCHILD/仙童
23+
DPAK-3TO-252-3
10000
原装正品真实库存现货热卖
询价
ON/安森美
23+
TO-252
90000
只做原厂渠道价格优势可提供技术支持
询价
ON/安森美
22+
TO-252
20000
深圳原装现货正品有单价格可谈
询价
ON/安森美
2122+
TO-252
15000
代理进口原装货源,假一赔十
询价
ON/安森美
2022+
SMD
2500
询价
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
询价
更多FQD2N100TMMOS(场效应管)供应商 更新时间2024-6-8 14:00:00