首页 >FQD19N10TM>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
100VN-ChannelMOSFET DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
100VN-ChannelMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
100VN-ChannelMOSFET DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELLOGICLEVELENHANCEMENTMODE | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
100VN-ChannelMOSFET DESCRIPTION TheUTC100VN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)areproducedbyUTC’splanarstripe,DMOStechnologywhichhasbeentailoredespeciallyintheavalancheandcommutationmodetominimizeon-stateresistance,providesuperiorswitchingperformance,and | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELLOGICLEVELENHANCEMENTMODE | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
100VN-ChannelMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFET짰MOSFET100V,15.6A,100m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON) | UMWUMW Rightway Semiconductor Co., Ltd. 友台友台半导体 | UMW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
FQD19N10TM
- 功能描述：
MOSFET 100V N-Ch QFET Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2024+原装现货 |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO252 |
154541 |
明嘉莱只做原装正品现货 |
询价 | ||
onsemi |
24+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
Faichild |
ROHS全新原装 |
TO252 |
10988 |
ST进口原装现货长期备货正纳电子QQ350053121 |
询价 | ||
FSC进口原 |
22+ |
TO-252 |
3414 |
长源创新-只做原装---假一赔十 |
询价 | ||
FSC |
22+ |
TO-252 |
13568 |
实力现货,随便验! |
询价 | ||
Fairchild(飞兆/仙童) |
2023+ |
N/A |
4550 |
全新原装正品 |
询价 | ||
onsemi(安森美) |
23+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON/安森美 |
2410+ |
TO-252 |
30000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
询价 | ||
NEWINORIGINAL |
2008++ |
TO-252 |
6300 |
新进库存/原装 |
询价 |
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