| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=3A •Dra | KECKEC CORPORATION KEC株式会社 | KEC | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ThisN-channelMOSFETSuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET3.0AMPERES600VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■ | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTim | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET3.0AMPERES600VOLTSRDS(on)=2.2OHMS | MotorolaMotorola, Inc 摩托罗拉 | Motorola |
详细参数
- 型号：
FQB3N60C
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
600V N-Channel MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-263(D2PAK) |
8866 |
询价 | |||
FCS |
24+ |
TO-263 |
5000 |
全现原装公司现货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAIRCHILD |
1822+ |
TO-263(D |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
FAIRCHIL |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
FAIRC |
18+ |
TO-263(D2PAK) |
41200 |
原装正品,现货特价 |
询价 | ||
VB |
2019 |
D2-PAK |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FAIRCHILD |
2023+ |
SOT-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FAIRC |
2020+ |
TO-263(D2PAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 |
相关规格书
更多- FQB3N60C_0605
- FQB3N80
- FQB3N90
- FQB3P20
- FQB3P50
- FQB44N08
- FQB44N10
- FQB45N03L
- FQB45N15V2
- FQB46N15
- FQB46N15TM_AM002
- FQB47P06TM
- FQB47P06TM_AM002
- FQB4N20
- FQB4N20LTM
- FQB4N25
- FQB4N50
- FQB4N60
- FQB4N80
- FQB4N90
- FQB4P25
- FQB4P40
- FQB50N06
- FQB50N06TM
- FQB55N06TM
- FQB55N10TM
- FQB5N15
- FQB5N20
- FQB5N20LTM
- FQB5N30TM
- FQB5N50
- FQB5N50CF
- FQB5N50CFTM
- FQB5N50TM
- FQB5N60C
- FQB5N60CTM_WS
- FQB5N80TM
- FQB5N90_13
- FQB5P10
- FQB5P20
- FQB60N03L
- FQB630
- FQB65N06
- FQB6N15
- FQB6N25
相关库存
更多- FQB3N60CTM
- FQB3N80TM
- FQB3N90TM
- FQB3P20TM
- FQB3P50TM
- FQB44N08TM
- FQB44N10TM
- FQB45N03LTM
- FQB45N15V2TM
- FQB46N15TM
- FQB47P06
- FQB47P06TM"AM002
- FQB47P06TM-AM002
- FQB4N20L
- FQB4N20TM
- FQB4N25TM
- FQB4N50TM
- FQB4N60TM
- FQB4N80TM
- FQB4N90TM
- FQB4P25TM
- FQB4P40TM
- FQB50N06LTM
- FQB55N06
- FQB55N10
- FQB58N08
- FQB5N15TM
- FQB5N20L
- FQB5N20TM
- FQB5N40TM
- FQB5N50C
- FQB5N50CFTF
- FQB5N50CTM
- FQB5N60
- FQB5N60CTM
- FQB5N60TM
- FQB5N90
- FQB5N90TM
- FQB5P10TM
- FQB5P20TM
- FQB60N03LTM
- FQB630TM
- FQB65N06TM
- FQB6N15TM
- FQB6N25TM
