零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FMC03N60E | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
FMC03N60E | N-CHANNEL SILICON POWER MOSFETFeatures | FujiFUJI CORPORATION 株式会社FUJI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社FUJI | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFUJI CORPORATION 株式会社FUJI | |||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | |||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | |||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | |||
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
RC-DriveandRC-DriveFast | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
?쏳C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
OptimizedEon,EoffandQrrforlowswitchinglosses | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
LightMOSPowerTransistor LightMOSPowerTransistor •NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts •IGBTwithintegratedreversediode •4Acurrentratingforreversediode •Upto10timeslowergatecapacitancethanMOSFET •Avalancherated •150°Coperatingtemperature •FullPakis | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
LightMOSPowerTransistor LightMOSPowerTransistor •NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts •IGBTwithintegratedreversediode •4Acurrentratingforreversediode •Upto10timeslowergatecapacitancethanMOSFET •Avalancherated •150°Coperatingtemperature •FullPakis | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
LightMOSPowerTransistor LightMOSPowerTransistor •NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts •IGBTwithintegratedreversediode •4Acurrentratingforreversediode •Upto10timeslowergatecapacitancethanMOSFET •Avalancherated •150°Coperatingtemperature •FullPakis | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
详细参数
- 型号:
FMC03N60E
- 制造商:
FUJI
- 制造商全称:
Fuji Electric
- 功能描述:
N-CHANNEL SILICON POWER MOSFETFeatures
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
46380 |
正品授权货源可靠 |
询价 | |||
IR |
23+ |
D2-PAK |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
FUJITSU/富士通 |
23+ |
T-PACK(S) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
F |
23+ |
T-PACK(S) |
10000 |
公司只做原装正品 |
询价 | ||
FUJI/富士电机 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
FUJI/富士电机 |
21+ROHS |
TO-263 |
94999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
FUJI/富士电机 |
2022+ |
TO-263 |
79999 |
询价 | |||
FUJI |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FUJI/富士电机 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
isc |
2024 |
TO-263 |
8000 |
国产品牌isc,可替代原装 |
询价 |
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