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FDP6676

30V N-Channel Logic Level PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“lowside”synchronousrectifieroperation,providinganextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6676

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=84A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP6676S

30V N-Channel PowerTrench SyncFET?

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6676S

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=76A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AD6676

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676BCBZRL

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676BCBZRL

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676EBZ

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676EBZ

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

CD6676

SILICONDIOXIDEPASSIVATED

•IN6677AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERCHIPS •SILICONDIOXIDEPASSIVATED •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW

CDI-DIODE

Compensated Deuices Incorporated

CDLL6676

0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS

•1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

CDLL6676

0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS

•1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

MicrosemiMicrosemi Corporation

美高森美美高森美公司

FDB6676

30VN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“lowside”synchronousrectifieroperation,providinganextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6676S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6676

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676A

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FDP6676

  • 功能描述:

    MOSFET 30V N-Ch PowerTrench Logic Level

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ON/安森美
21+
TO-220
60000
原装正品进口现货
询价
仙童
05+
TO-220
5000
原装进口
询价
03+
5000
询价
FAIRCHILD
16+
TO-220
10000
全新原装现货
询价
FSC
2022+
TO220
5000
全现原装公司现货
询价
FAIRCHILD
2020+
TO-220
210000
100%进口原装正品公司现货库存
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
90650
正品授权货源可靠
询价
FSC/ON
23+
原包装原封 □□
20082
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHILD
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
更多FDP6676供应商 更新时间2024-5-6 17:50:00