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FDB6676

30V N-Channel Logic Level PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“lowside”synchronousrectifieroperation,providinganextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6676S

30V N-Channel PowerTrench SyncFET?

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AD6676

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676BCBZRL

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676BCBZRL

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676EBZ

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD6676EBZ

WidebandIFReceiverSubsystem

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

CD6676

SILICONDIOXIDEPASSIVATED

•IN6677AVAILABLEINJANHCANDJANKCPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERCHIPS •SILICONDIOXIDEPASSIVATED •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW

CDI-DIODE

Compensated Deuices Incorporated

CDLL6676

0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS

•1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

MicrosemiMicrosemi Corporation

美高森美美高森美公司

CDLL6676

0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS

•1N6677UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/610 •0.2&0.5AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •LEADLESSPACKAGEFORSURFACEMOUNT •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION

CDI-DIODE

Compensated Deuices Incorporated

FDD6676

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6676A

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676S

30VN-ChannelPowerTrenchMOSFET

GeneralDescription TheFDS6676SisdesignedtoreplaceaDPAKMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676SincludesanintegratedSchottkydiodeusing

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6676S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDMA6676PZ

MOSFET??Single,P-Channel,POWERTRENCH

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FDMC6676BZ

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PDF上传者:深圳德田科技有限公司

详细参数

  • 型号:

    FDB6676

  • 功能描述:

    MOSFET 30V N-Ch PowerTrench Logic Level

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
TO-263AB
8357
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD
2022
TO263
2058
原厂原装正品,价格超越代理
询价
FAIRCHILD
03+
TO-263
694
询价
FSC
23+
TO-263
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
仙童
06+
TO-263
3500
原装
询价
FAI品牌
2017+
TO263贴片三极管
54896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
2003
TO263
14680
原装现货海量库存欢迎咨询
询价
FAIRCHI
23+
SOT-263
8560
受权代理!全新原装现货特价热卖!
询价
FAIRCHILD
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
更多FDB6676供应商 更新时间2024-5-1 10:22:00