FDG资料使用说明书贸易商威世科技Vishay-114ic电子网

首页 >FDG>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FDG	文件：134.6 Kbytes Page：7 Pages	Axial Vitreous Leaded Wirewound Resistors with CECC Approval	VishayVishay Siliconix 威世科技	Vishay
FDG311N	文件：89.53 Kbytes Page：5 Pages	N-Channel 2.5V Specified PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG312P	文件：206.75 Kbytes Page：8 Pages	P-Channel 2.5V Specified PowerTrench??MOSFET GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance.Thesedevicesarewellsuitedforportablee	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG313N	文件：713.24 Kbytes Page：8 Pages	Digital FET, N-Channel GeneralDescription ThisN-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeciallyforlowvoltage	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG314P	文件：84.38 Kbytes Page：5 Pages	Digital FET, P-Channel GeneralDescription ThisP-ChannelenhancementmodefieldeffecttransistorisproducedusingFairchildSemiconductor’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessistailoredtominimizeonstateresistanceatlowgatedriveconditions.Thisdeviceisdesigned	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG316P	文件：70.79 Kbytes Page：5 Pages	P-Channel Logic Level PowerTrench MOSFET GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG326	文件：69.5 Kbytes Page：5 Pages	P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS=	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG326P	文件：69.5 Kbytes Page：5 Pages	P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–1.5A,–20V.RDS(ON)=140mΩ@VGS=–4.5V RDS(ON)=180mΩ@VGS=	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG327N	文件：79.82 Kbytes Page：5 Pages	20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG327NZ	文件：235.39 Kbytes Page：5 Pages	20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG328P	文件：76.76 Kbytes Page：5 Pages	P-Channel 2.5V Specified PowerTrench MOSFET Description ThisP-Channel2.5VspecifiedMOSFETisproducedinaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimized forpowermanagementapplicationsforawiderangeofgatedrivevoltages(2.5V–12V). Features •–1.5A,–20V.Rds(on)=0.1	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG329N	文件：79.84 Kbytes Page：5 Pages	20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizeduseinsmallswitchingregulators,providinganextremelylowRDS(ON)andgatec	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG330P	文件：150.12 Kbytes Page：5 Pages	P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2A,–12V.RDS(ON)=110mΩ@VGS=–4.5VRDS(ON)=150mΩ@VGS=–2.5VRDS(ON)=215mΩ@VGS=–	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG6301N	文件：226.61 Kbytes Page：8 Pages	Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG6301N	文件：1.08153 Mbytes Page：4 Pages	Dual N-Channel MOSFET ■Features ●VDS(V)=25V ●ID=220mA(VGS=4.5V) ●RDS(ON)6kVHumanBodyModel).	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
FDG6301N_F085	文件：351.8 Kbytes Page：5 Pages	Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG6301N-F085	文件：640.17 Kbytes Page：6 Pages	Dual N-Channel, Digital FET Features •25V,0.22AContinuous,0.65APeak •RDS(ON)=4Ω@VGS=4.5V, •RDS(ON)=5Ω@VGS=2.7V. •VeryLowLevelGateDriveRequirementsallowingDirectop− Erationin3VCircuits(VGS(th)6kVHumanBodyModel) •CompactIndu	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
FDG6302	文件：302.73 Kbytes Page：8 Pages	Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG6302P	文件：302.73 Kbytes Page：8 Pages	Dual P-Channel, Digital FET GeneralDescription ThesedualP-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDG6303	文件：226.92 Kbytes Page：8 Pages	Dual N-Channel, Digital FET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

12 3 4 >>>

晶体管资料

型号：
FDG002
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
性质：
微波（MW）_静噪放大（LN）_宽频带放大（A）
封装形式：
直插封装
极限工作电压：
30V
最大电流允许值：
0.7A
最大工作频率：
<1MHZ或未知
引脚数：
4
可代换的型号：
最大耗散功率：
0.7W
放大倍数：
图片代号：
D-51
vtest：
30
htest：
999900
atest：
.7
wtest：
.7

详细参数

型号：
FDG
功能描述：
环形推拉式连接器 STRAIGHT PLUG LONG VERSION
RoHS：
否
制造商：
Hirose Connector
产品类型：
Connectors
系列：
HR10
触点类型：
Socket(Female)
外壳类型：
Receptacle
触点数量：
4
外壳大小：
7
安装风格：
Panel
端接类型：
Solder
电流额定值：
2 A

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凯盛恒创科技有限公司	FDG8850NZ	FAIRCHILD/仙童	23+	SOT363	68889	一站式BOM配单	询价
深圳市华博特电子有限公司	FDG6331L	onsemi	23/22+	NA	9000	代理渠道.实单必成	询价
深圳市弘为电子有限公司	FDG326P	FAIRCH	16+	SOT-26	1068	原装现货假一罚十	询价
深圳市恒佳微电子有限公司	FDG6335N	Onsemi	20+		6000	原装正品现货	询价
深圳市球芯贸易有限公司	FDG6304P	ON	20+	SOT-363	300	诚信至上只做原装	询价
深圳市柯尔基电子有限公司	FDG6335N	FAIRCHILD	23+24	SC70-6	28950	专营原装正品SMD二三极管,电源IC	询价
深圳市百视威讯电子科技有限公司	FDG.1B.110.CZZ		23+	N/A	58600	一级代理放心采购	询价
深圳市英科美电子有限公司	FDG6320C	FAIRCHILD	2021+	SOT-363	5500	原装正品假一罚十	询价
深圳市纳艾斯科技有限公司	FDG6316P	FAIRCHILD	2020+	SC70-6	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市瑞智芯科技有限公司	FDG6322C	FSC	2019/33		1950		询价

更多FDG供应商更新时间2024-6-1 14:00:00

晶体管资料

详细参数

相关规格书

相关库存