| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelUniFETTMIIMOSFET600V,5.5A,1.25廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelUniFETTMIIMOSFET600V,5.5A,1.25廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelUniFETTMIIMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,6.5A,1.25? | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelUniFETTMIIMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelUniFETTMIIMOSFET600V,5.5A,1.25廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7AShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7ARUFIGBTCO-PAK Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7ARUFIGBTCO-PAK Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7ARUFIGBTCO-PAK Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7ALowSaturationIGBTCO-PAK Description FairchildsInsulatedGateBipolarTransistors(IGBTs)providesverylowconductionandswitchinglosses.ThedeviceisdesignedforLampapplicationswhereverylowOn-VoltageDropisarequiredfeature. Features •Lowsaturationvoltage:VCE(sat)=1.4V@IC=7A •Highinputimp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7ARUFIGBTCO-PAK Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600V,7ARUFIGBTCO-PAK Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
600VN-ChannelMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
AdvancedN-ChPowerMOSFET-I | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
AdvancedN-ChPowerMOSFET-I | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
F |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
询价 | ||
F |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
询价 | ||
F |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
F |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBSEMI |
19+ |
TO-252 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
FAIRCHILD |
21+ |
SOT23-6 |
55 |
原装现货假一赔十 |
询价 | ||
FAIRCHILD |
21+ |
SOT23-6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD |
21+ |
SOT23-6 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
FAIRCHILD |
20+ |
SOT23-6 |
55 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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