FDC6310P中文资料PDF规格书
FDC6310P规格书详情
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
● –2.2 A, –20 V.
RDS(ON) = 125 mW @ VGS = –4.5 V
RDS(ON) = 190 mW @ VGS = –2.5 V
● Low gate charge
● Fast switching speed
● High performance trench technology for extremely low RDS(ON)
● SuperSOT TM -6 package: small footprint 72
smaller than standard SO-8); low profile (1mm thick)
Applications
● Load switch
● Battery protection
● Power management
产品属性
- 型号:
FDC6310P
- 功能描述:
MOSFET Dual P-Ch 2.5V Spec Power Trench
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
0715+ |
SOT-23-6 |
29403 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
询价 | ||
ON |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ON/安森美 |
23+ |
TSOP-6 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
FAIRCHILD |
20+/21+ |
SOT-163 |
9500 |
全新原装现货 |
询价 | ||
ON |
2023+ |
SOT23-6 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
FAIRCHILD |
1802+ |
SOT23-6 |
6528 |
只做原装正品现货,或订货假一赔十! |
询价 | ||
ON/安森美 |
22+ |
SMD |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 | ||
ON/安森美 |
23+ |
SOT23-6 |
41316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
Fairchild/ON |
21+ |
SuperSOT?6 |
13880 |
公司只售原装,支持实单 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT-23-6 |
354000 |
询价 |