FDC6302P中文资料PDF规格书
FDC6302P规格书详情
General Description
These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.
Features
■ -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V.
■ Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
■ Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
■ Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET.
产品属性
- 型号:
FDC6302P
- 功能描述:
MOSFET SSOT-6 P-CH -25V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON/安森美 |
23+ |
TSOP-6 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
Fairchild/ON |
21+ |
SuperSOT?6 |
13880 |
公司只售原装,支持实单 |
询价 | ||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
SSOT6 |
19800 |
一站式BOM配单 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT-23-6 |
354000 |
询价 | |||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
ON/安森美 |
23+ |
SOT23-6 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
SOT23-6 |
6000 |
终端可以免费供样,支持BOM配单 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
SSOT-6 |
45000 |
热卖优势现货 |
询价 |