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ECQ-E4105JF

包装:散装 封装/外壳:径向 类别:电容器 薄膜电容器 描述:CAP FILM 1UF 5% 400VDC RADIAL

Panasonic Electronic Components

Panasonic Electronic Components

ECQ-E4105JFW

包装:带盒(TB) 封装/外壳:径向 类别:电容器 薄膜电容器 描述:CAP FILM 1UF 5% 400VDC RADIAL

Panasonic Electronic Components

Panasonic Electronic Components

ECQ-E4105JFY

包装:散装 封装/外壳:径向 类别:电容器 薄膜电容器 描述:CAP FILM 1UF 5% 400VDC RADIAL

Panasonic Electronic Components

Panasonic Electronic Components

4105

RelampableSocket

VCC

Visual Communications Company

ACTR4105

trueone-port,surface-acoustic-wave(SAW)resonator

ACTAdvanced Crystal Technology

先进的晶体先进的晶体技术

AN4105

DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter

Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

AUIRFR4105

AdvancedPlanarTechnologyLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105

AdvancedPlanarTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105

AdvancedPlanarTechnology

AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRFR4105TR

AdvancedPlanarTechnologyLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105TRL

AdvancedPlanarTechnologyLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105TRR

AdvancedPlanarTechnologyLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105Z

HEXFET짰PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRFR4105Z

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

AUIRFR4105ZTR

HEXFET짰PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105ZTRL

HEXFET짰PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFR4105ZTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRFR4105ZTRR

HEXFET짰PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRFU4105Z

HEXFET짰PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    ECQ-E4105JF

  • 制造商:

    Panasonic Electronic Components

  • 类别:

    电容器 > 薄膜电容器

  • 系列:

    ECQ-E(F)

  • 包装:

    散装

  • 容差:

    ±5%

  • 额定电压 - AC:

    200V

  • 额定电压 - DC:

    400V

  • 介电材料:

    聚酯,金属化

  • 工作温度:

    -40°C ~ 105°C

  • 安装类型:

    通孔

  • 封装/外壳:

    径向

  • 大小 / 尺寸:

    1.024" 长 x 0.335" 宽(26.00mm x 8.50mm)

  • 高度 - 安装(最大值):

    0.748"(19.00mm)

  • 端接:

    PC 引脚

  • 引线间距:

    0.886"(22.50mm)

  • 应用:

    通用

  • 描述:

    CAP FILM 1UF 5% 400VDC RADIAL

供应商型号品牌批号封装库存备注价格
5
全新原装 货期两周
询价
2022+
1
全新原装 货期两周
询价
Panasonic
20+
N/A
2146
加我qq或微信,了解更多详细信息,体验一站式购物
询价
PANASONIC
20+
电容器
2926
就找我吧!--邀您体验愉快问购元件!
询价
PANASONIC(松下)
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
PANASONIC-松下
24+25+/26+27+
车规-薄膜电容
6418
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
PANASONIC/松下
2022+
DIP
112000
原厂代理 终端免费提供样品
询价
PANASONIC/松下
23+
DIP
6800
专注配单,只做原装进口现货
询价
PANASONIC/松下
23+
DIP
6800
专注配单,只做原装进口现货
询价
PANASONIC/松下
22+
SOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
更多ECQ-E4105JF供应商 更新时间2024-5-14 16:06:00