首页 >DFR10A60CTA>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NewGenerationN-ChPowerMOSFET | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
NewGenerationN-ChPowerMOSFET | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
10AmpSiliconRectifiers Features •Lowforwardvoltagedrop •Highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed:260°C/10seconds /.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant | TAITRON TAITRON | TAITRON | ||
FRD-ForPowerFactorImprovementHighFrequencyRectification FEATURES *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.58Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFETsSiliconN-ChannelMOS(DTMOS?? Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FRD-ForPowerFactorImprovementHighFrequencyRectification FEATURES *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation | NIEC | ||
FASTRECTIFIERS(10A,300-600V) UltraFastRecoveryRectifierDiodes ULTRAFASTRECTIFIERS10AMPERES300--600VOLTS | MOSPEC MOSPEC | MOSPEC | ||
UtraFastRecoveryRectifierDiodes | MOSPEC MOSPEC | MOSPEC | ||
FullPlasticUltrafastPowerRectifiers | MOSPEC MOSPEC | MOSPEC | ||
Single-PhaseSingleIn-LineBridgeRectifiers | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
1.0AFastRecoveryRectifier | TOREXTOREX SEMICONDUCTOR LTD. 特瑞仕特瑞仕半导体株式会社 | TOREX |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIROSE |
05+ |
原厂原装 |
5202 |
只做全新原装真实现货供应 |
询价 | ||
HIROSE |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
Microchip |
22+ |
SMD |
10000 |
公司只有原装 |
询价 | ||
Microchip |
18+ |
SMD |
7 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Microchip |
23+ |
SMD |
7 |
正规渠道,只有原装! |
询价 | ||
Microchip |
18+ |
SMD |
7 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
Microchip |
23+ |
SMD |
10000 |
公司只做原装，可来电咨询 |
询价 | ||
Microchip |
22+ |
SMD |
10000 |
公司只有原装 |
询价 | ||
MICROCHIP/原装 |
SMD |
12000 |
原装现货,长期供应,终端账期支持 |
询价 | |||
Microchip |
23+ |
SMD |
10000 |
原装，可配单 |
询价 |
