TK10A60W

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

TK10A60W

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators

TK10A60W

N-Channel 650V (D-S) Power MOSFET

TK10A60W5

MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=85ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.35Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK10A60W5

isc N-Channel MOSFET Transistor

10A60

LEADED(THRU-HOLE)GeneralPurpose&FastRecoveryRectifiers

LEADED(THRU-HOLE) GeneralPurpose&FastRecoveryRectifiers GENERALPURPOSERECTIFIERS(IncludingGlassPassivated,useGsuffix)OperatingTemperature:-65°Cto125° FASTRECOVERYOperatingTemperature:-65°Cto125°C

10A60

GENERALPURPOSESILICONRECTIFIER

FEATURES ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ●Constructionutilizesvoid-freemoldedplastictechnique ●Lowreverseleakage ●Highforwardsurgecurrentcapability ●Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)le

10A60

Lowreverseleakage

FEATURES ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ●Constructionutilizesvoid-freemoldedplastictechnique ●Lowreverseleakage ●Highforwardsurgecurrentcapability ●Hightemperaturesolderingguaranteed:250°C/10seconds,0.375”(9.5mm)le

10A60

GENERALPURPOSESILICONRECTIFIER

10A60

PLASTICSILICONRECTIFIERS

FEATURES Lowcost Lowleakage Lowforwardvoltagedrop Highcurrentcapability Diffusedjunction EasilycleanedwitnFreon,Alcohol,lsopropanol andsimilarsolvents TheplasticmaterialcarriesU/Lrecognition94V-0

10A60

STANDARDRECTIFIER

Features ·TheplasticpackagecarriesUnderwritesLaboratory FlammabilityClassification94V-0 ·Highforwardcurrentcapability ·Highsurgecurrentcapability ·Constructionutilizesvoid-freemoldedplastictechnique ·Hightemperaturesolderingguaranteed:250℃/10seconds, 0.375(9.5mm

10A60C

PlasticSiliconRectifiers

Features ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0

10A60F

PlasticSiliconRectifiers

Features ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0

10A60FC

PlasticSiliconRectifiers

Features ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0

10A60T

PlasticSiliconRectifiers

Features ◇Lowcost ◇Diffusedjunction ◇Lowleakage ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇EasilycleanedwitnFreon,Alcohol,lsopropanolandsimilarsolvents ◇TheplasticmaterialcarriesU/Lrecognition94V-0

10A60W

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators

B10A60

SCHOTTKYBARRIERTYPEDIODESTACK(SWITCHINGTYPEPOWERSUPPLY,CONVERTER&CHOPPER)

SWITCHINGTYPEPOWERSUPPLYAPPLICATION. CONVERTER&CHOPPERAPPLICATION. FEATURES •AverageOutputRectifiedCurrent:IO=10A(Tc=114°C). •RepetitivePeakReverseVoltage:VRRM=60V. •FastReverseRecoveryTime:trr=35ns. •LowPeakForwardVoltage:0.52V(Typ.)

B10A60VIC

SCHOTTKYBARRIERTYPEDIODESTACK(SWITCHINGTYPEPOWERSUPPLY,CONVERTER&CHOPPER)

SWITCHINGTYPEPOWERSUPPLYAPPLICATION. CONVERTER&CHOPPERAPPLICATION. FEATURES •AverageOutputRectifiedCurrent:IO=10A(Tc=114°C). •RepetitivePeakReverseVoltage:VRRM=60V. •FastReverseRecoveryTime:trr=35ns. •LowPeakForwardVoltage:0.52V(Typ.)

B10A60VIC

SCHOTTKYBARRIERTYPEDIODE

B10A60VIC

TO-220ISPACKAGE