首页>CY7C25652KV18-500BZC>规格书详情

CY7C25652KV18-500BZC中文资料PDF规格书

CY7C25652KV18-500BZC
厂商型号

CY7C25652KV18-500BZC

参数属性

CY7C25652KV18-500BZC 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC SRAM 72MBIT PARALLEL 165FBGA

功能描述

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

文件大小

496.32 Kbytes

页面数量

31

生产厂商 CypressSemiconductor
企业简称

Cypress赛普拉斯

中文名称

赛普拉斯半导体公司官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-4 10:16:00

CY7C25652KV18-500BZC规格书详情

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

❐ Supports concurrent transactions

■ 550 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

❐ Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]

❐ Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

产品属性

  • 产品编号:

    CY7C25652KV18-500BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,QDR II+

  • 存储容量:

    72Mb(2M x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 72MBIT PARALLEL 165FBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
BGA
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
Cypress Semiconductor Corp
22+/23+
165-FBGA(13x15)
7500
原装进口公司现货假一赔百
询价
INFINEON/英飞凌
23+
P-BGA-165
28611
为终端用户提供优质元器件
询价
CYPRESS(赛普拉斯)
23+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
Cypress(赛普拉斯)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
Cypress
22+
NA
133
加我QQ或微信咨询更多详细信息,
询价
CYPRESS
21+
FBGA165
390
原装现货假一赔十
询价
CYPRESS
FBGA165
6000
原装现货,长期供应,终端可账期
询价
Cypress Semiconductor Corp
21+
NA
11200
正品专卖,进口原装深圳现货
询价
INFINEON
23+
P-BGA-165
14253
原包装原标现货,假一罚十,
询价