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CY7C25652KV18-400BZC中文资料PDF规格书

CY7C25652KV18-400BZC
厂商型号

CY7C25652KV18-400BZC

参数属性

CY7C25652KV18-400BZC 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC SRAM 72MBIT PARALLEL 165FBGA

功能描述

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

文件大小

496.32 Kbytes

页面数量

31

生产厂商 CypressSemiconductor
企业简称

Cypress赛普拉斯

中文名称

赛普拉斯半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-6 11:11:00

CY7C25652KV18-400BZC规格书详情

Functional Description

The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

❐ Supports concurrent transactions

■ 550 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

❐ Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD [1]

❐ Supports both 1.5 V and 1.8 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

产品属性

  • 产品编号:

    CY7C25652KV18-400BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,QDR II+

  • 存储容量:

    72Mb(2M x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 72MBIT PARALLEL 165FBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
CYPRESS
2020+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
Cypress Semiconductor Corp
21+
165-LBGA
10980
正规渠道/品质保证/原装正品现货
询价
CYPRESS
2016+
FBGA165
3526
假一罚十进口原装现货原盘原标!
询价
INFINEON/英飞凌
23+
P-BGA-165
28611
为终端用户提供优质元器件
询价
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
专注配单,只做原装进口现货
询价
SPANSION(飞索)
2117+
FBGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
Cypress
23+
FBGA
8650
受权代理!全新原装现货特价热卖!
询价
CYPRESS
17+
BGA
60000
保证进口原装可开17%增值税发票
询价
CYPRESS(赛普拉斯)
23+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
CYPRESS
22+23+
BGA
23127
绝对原装正品全新进口深圳现货
询价