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NDF02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60ZG

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60ZG

PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

NDF02N60ZG

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60ZG

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60ZH

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDF02N60ZH

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDP02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDP02N60ZG

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDT02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

PJM02N60SA

N-EnhancementModeFieldEffectTransistor

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

SDU02N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SDUD02N60

SuperhighdensecelldesignforlowRDS(ON).

Samhop

三合微科

SGB02N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGB02N60

FASTIGBTINNPTTECHNOLOGY

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N60

FASTIGBTINNPTTECHNOLOGY

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SGD02N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
CJ
2017+
TO-251
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
CJ
2020+
TO-251
985000
100%进口原装正品公司现货库存
询价
长电
22+23+
TO-251S
24020
绝对原装正品全新进口深圳现货
询价
长电
2017+
TO-251
9800
全新原装正品现货/长期大量供货!!
询价
23+
N/A
90550
正品授权货源可靠
询价
CJ/长电
22+
TO-251S
581438
原装正品现货,可开13点税
询价
CJ/长电
21+
TO-251
30000
百域芯优势 实单必成 可开13点增值税发票
询价
长电
21+
TO-251
15500
询价
CJ/长电
2022+
TO-252
32500
原厂代理 终端免费提供样品
询价
长电
2022+
TO-251
7300
原装现货
询价
更多CJD02N60供应商 更新时间2024-5-14 9:35:00