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MTM12N10

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTM12N10

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

MTM12N10E

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

MTP12N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP12N10E

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP12N10E

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP12N10E

TMOSPOWERFET12AMPERES100VOLTSRDS(on)=0.16OHM

MotorolaMotorola, Inc

摩托罗拉

MTP12N10L

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NTD12N10

PowerMOSFET12Amps,100Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTD12N10

PowerMOSFET12Amps,100VoltsN?묬hannelEnhancement?묺odeDPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTD12N10G

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

NTD12N10G

PowerMOSFET12Amps,100Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

PHD12N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplication

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHP12N10E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

RFM12N10

12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFM12N10

12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFM12N10

12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFM12N10L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFP12N10

12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

RFP12N10

12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

详细参数

  • 型号:

    CED12N10

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET/華瑞
24+
TO-251
156677
明嘉莱只做原装正品现货
询价
23+
N/A
35800
正品授权货源可靠
询价
VB
2019
TO-251
55000
绝对原装正品假一罚十!
询价
CET
2020+
TO-251
50210
公司代理品牌,原装现货超低价清仓!
询价
CET
2020+
TO-251
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
CET/華瑞
21+
TO-251
30000
只做正品原装现货
询价
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
VBsemi(台湾微碧)
2112+
TO-251
105000
80个/管一级代理专营品牌!原装正品,优势现货,长期
询价
VBsemi
21+
TO-251
15500
询价
VBSEMI/台湾微碧
TO-251
265209
假一罚十原包原标签常备现货!
询价
更多CED12N10供应商 更新时间2024-5-23 18:06:00