零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
C6D10065E | Silicon Carbide Schottky Diode Z-Rec® Rectifier Features •New6thGenerationTechnology •LowForwardVoltageDrop(VF ) •ZeroReverseRecoveryCurrent •ZeroForwardRecoveryVoltage •LowLeakageCurrent(Ir ) •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •HigherSystemLevelEffi | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | |
C6D10065E | 包装:管件 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 二极管 - 整流器 - 单 描述:GEN 6 650V 10 A SBD | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | |
650-VDirectWBGDiode KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableV FandQRRatelevated temperatures | AnalogPower Analog Power | AnalogPower | ||
650-VDirectWBGDiode KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableVFandQRRatelevated temperatures | AnalogPower Analog Power | AnalogPower | ||
650-VDirectWBGDiode KeyFeatures: •SiCperformance •Easyparalleling •Highcurrentcarryingcapability •Verylowjunctioncapacitance •HighlystableVFandQRRatelevated temperatures | AnalogPower Analog Power | AnalogPower | ||
SiliconCarbideSchottkyDiode | CreeCree Inc. 科锐科锐半导体制造商 | Cree | ||
6thGeneration650V,10ASiliconCarbideSchottkyDiode Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | ||
6thGeneration650V,10ASiliconCarbideSchottkyDiode Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | ||
6thGeneration650V,10ASiliconCarbideSchottkyDiode Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom | WOLFSPEED WOLFSPEED, INC. | WOLFSPEED | ||
10A650VSICPOWERSCHOTTKYRECTIFIERS 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin Pb−FreeDevice AllSMCpartsaretraceablet | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
650VSICPOWERSCHOTTKYRECTIFIER 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage “-A”isanAEC-Q101qualifieddevice Terminalsfinish:100PureTin Halogen-Free AllSMCparts | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
10A650VSICPOWERSCHOTTKYRECTIFIERS 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin Pb−FreeDevice AllSMCpartsaretraceablet | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
10A650VSICPOWERSCHOTTKYRECTIFIERS 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin Pb−FreeDevice AllSMCpartsaretraceablet | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
10A650VSICPOWERSCHOTTKYRECTIFIERS 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin Pb−FreeDevice AllSMCpartsaretraceablet | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
10A650VSICPOWERSCHOTTKYRECTIFIERS 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin Pb−FreeDevice AllSMCpartsaretraceablet | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
650VSICPOWERSCHOTTKYRECTIFIER 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE | ||
650VSICPOWERSCHOTTKYRECTIFIER 175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100PureTin “-A”isanAEC-Q101qualifieddevice Pb−FreeDevice AllSMCp | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | SMCDIODE |
产品属性
- 产品编号:
C6D10065E
- 制造商:
Wolfspeed, Inc.
- 类别:
分立半导体产品 > 二极管 - 整流器 - 单
- 系列:
Z-Rec®
- 包装:
管件
- 二极管类型:
碳化硅肖特基
- 电流 - 平均整流 (Io):
35A
- 速度:
无恢复时间 > 500mA(Io)
- 不同 Vr、F 时电容:
611pF @ 0V,1MHz
- 安装类型:
表面贴装型
- 封装/外壳:
TO-252-3,DPak(2 引线 + 接片),SC-63
- 供应商器件封装:
TO-252-2
- 工作温度 - 结:
-55°C ~ 175°C
- 描述:
GEN 6 650V 10 A SBD
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
EKOWEISS |
23+ |
TO-252-2 |
100000 |
全新原装 |
询价 | ||
Wolfspeed, Inc. |
21+ |
SMA(DO-214AC) |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
WOLFSPEED |
22 |
sop |
100 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
Wolfspeed, Inc. |
24+ |
TO-252-2 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
Cree/Wolfspeed |
50 |
询价 | |||||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
Wolfspeed |
22+ |
Tube |
5710 |
只做原装进口货 |
询价 | ||
CREE |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
THOMASBETTS/ANSLEY |
新 |
60 |
全新原装 货期两周 |
询价 |
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