| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=-400V,Rds(on)=7.0ohm,Id=-1.8A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
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