| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ChargeandDischargeSwitchforNotebookPCBatteryAppilcation | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-ChannelEnhancementModeMOSFET Features RDS(ON)=5.2mQ@VGs=-10V RDS(ON)=9.5mQ@VGs=-4V SuperhighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrent capability | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
RoHSCompliantContainingnoLead,noBromideandnoHalogen | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
RoHSCompliantContainingnoLead,noBromideandnoHalogen | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ChargeandDischargeSwitchforNotebookPCBatteryApplication | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ChargeandDischargeSwitchforNotebookPCBatteryApplication | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •Advancedprocesstechnology •Fullyavalancherated •Surface-mount(IRFR9310,SiHFR9310) •Straightlead(IRFU9310,SiHFU9310) •P-channel •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=-400V,Rds(on)=7.0ohm,Id=-1.8A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPOWERMOSFET Description ThirdgenerationPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre | VishayVishay Siliconix 威世科技 | Vishay |
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