首页 >BTS9014-SM>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TheG9014isdesignedforgeneralpurposeamplifierapplications | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
NPNEPITAXIALTRANSISTOR Description TheG9014isdesignedforgeneralpurposeamplifierapplications. | GTM 勤益投資控股股份有限公司 | GTM | ||
PChannelPowerMOSFET | GSGGunter Seniconductor GmbH. Gunter Seniconductor GmbH. | GSG | ||
ExcellentHFELinearityHFE:HFE(0.1mA)/hFE(2mA)=0.95(Typ.) | GSMEGuilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. | GSME | ||
PNPEPITAXIALTRANSISTOR | GTM 勤益投資控股股份有限公司 | GTM | ||
NPNEPITAXIALTRANSISTOR | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
NPNEPITAXIALTRANSISTOR | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
NPNEPITAXIALTRANSISTOR | GTM 勤益投資控股股份有限公司 | GTM | ||
NPNSILICONTRANSISTOR PRE-AMPLIFIER，LOWLEVEL&LOWNOISE | HuashanHuashan Electronic Devices Co 华汕电子器件 | Huashan | ||
GENERALPURPOSETRANSISTOR | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHE9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features •HighTotalPowerDissipation(PD:450mW) •ComplementarytoHE9015 •HighhFEandGoodLinearity | HSMC 华昕 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHMBT9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features •HighTotalPowerDissipation(PD:225mW) •ComplementarytoHMBT9015 •HighhFEandGoodLinearity | HSMC 华昕 | HSMC | ||
NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications????????? NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications | SEMTECH Semtech Corporation | SEMTECH | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.1A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •ForautomaticInsertion •Endstackable •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •ForautomaticInsertion •Endstackable •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFET짰POWERMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号：
BTS9014-SM
- 制造商：
Panasonic Industrial Company
- 功能描述：
SERVICE MANUAL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
西门子 |
23+ |
SOT23-5 |
5177 |
现货 |
询价 | ||
isc |
2024 |
TO-220 |
200 |
国产品牌isc,可替代原装 |
询价 | ||
infineon |
22+ |
TO263-5 |
2645 |
100%全新原装公司现货供应!随时可发货 |
询价 | ||
INFINEON |
23+ |
TO263 |
7800 |
全新原装正品,现货销售 |
询价 | ||
INFINEON |
TO-263 |
38 |
询价 | ||||
Infineon |
23+ |
SMD |
23921 |
全新原装现货,专业代理热卖 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON |
22+ |
TO263-5 |
368 |
全新原装现货!自家库存! |
询价 | ||
INF |
23+ |
TO263-5 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 |
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