首页 >BFR540超小型管>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscSiliconPNPPowerTransistor DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •ComplementtoTypeBD539A APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconPNPPowerTransistor DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) •ComplementtoTypeBD539B APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | POINN | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | POINN | ||
PNPSILICONPOWERTRANSISTORS PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
iscSiliconPNPPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
5.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200Volts CURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinl | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN9GHzWidebandTransistor ■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NXP/恩智浦 |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
NEXPERIA/安世 |
2122+ |
SOT-23 |
98800 |
全新原装正品现货,假一赔十 |
询价 | ||
NEXPERIA/安世 |
23+ |
12000 |
询价 | ||||
NXP/恩智浦 |
23+ |
SOT-23 |
6000 |
原装正品假一罚十 |
询价 | ||
NXP |
23+ |
SOT-23 |
4335 |
专注配单,只做原装进口现货 |
询价 | ||
NXP |
23+ |
SOT-23 |
4335 |
专注配单,只做原装进口现货 |
询价 | ||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
SOT-23 |
6200 |
新进库存/原装 |
询价 | ||
MOT/ST/PH |
2339+ |
CAN3 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
2022+ |
7300 |
原装现货 |
询价 |
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