| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
UHF power transistor DESCRIPTION NPNdoublepolysiliconbipolarpowertransistorwithburiedlayerforlowvoltagemediumpowerapplicationsencapsulatedinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Highpowergain •Highefficiency •1.9GHzoperatingarea •Linearandnon-linearoperation. APP | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPNSiliconRFTransistor •Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunications systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=5.5GHz | SIEMENS Siemens Ltd | SIEMENS | ||
NPN Silicon RF Transistor NPNSiliconRFTransistor ●Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA ●PoweramplifiersforDECTandPCNsystems ●Integratedemitterballastresistor ●fT=5.5GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistor FEATURES ·Lowcurrentconsumption (100mAto1mA) ·Lownoisefigure ·Goldmetallizationensures excellentreliability. APPLICATIONS ·RFlowpoweramplifiers,suchas pockettelephones,paging systems,withsignalfrequencies upto2GHz. DESCRIPTION NPNsiliconwidebandtransi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistor FEATURES ·Lowcurrentconsumption (100mAto1mA) ·Lownoisefigure ·Goldmetallizationensures excellentreliability. APPLICATIONS ·RFlowpoweramplifiers,suchas pockettelephones,paging systems,withsignalfrequencies upto2GHz. DESCRIPTION NPNsiliconwidebandtransi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS WidebandapplicationsinUHFlowpoweramplifiers, | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS WidebandapplicationsinUHFlowpoweramplifiers, | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN 5 GHz wideband transistor DESCRIPTION NPNsiliconwidebandtransistorinafour-leaddualemitterSOT143Bplasticpackage(crossemitter). FEATURES •Lowcurrentconsumption(100µAto1mA) •Lownoisefigure •Goldmetallizationensuresexcellentreliability. APPLICATIONS •RFlowpoweramplifiers,suchaspocket | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power transistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
UHF power transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC | ||
UHF power transistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC |
详细参数
- 型号：
BFG2
- 制造商：
NXP Semiconductors
- 功能描述：
BFG21W UHF power transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
标准封装 |
36532 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
NXP |
2022 |
SOT343 |
2000 |
原厂原装正品,价格超越代理 |
询价 | ||
NXP |
23+ |
SOT343 |
11000 |
原装现货特价热销 |
询价 | ||
NXP(恩智浦) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
NXP/恩智浦 |
SOT343 |
7906200 |
询价 | ||||
NXP/恩智浦 |
23+ |
SOT-343 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
SOT-343SOT-323-4 |
7380 |
新进库存/原装 |
询价 | ||
NXP |
13+ |
SOT343 |
31000 |
特价热销现货库存 |
询价 | ||
P1 |
22+ |
SOOT-343 |
3600 |
绝对原装!现货热卖! |
询价 | ||
NXP |
23+ |
SOT343 |
35600 |
原装正品,假一罚十 |
询价 |
相关规格书
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- BFG31,115
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- BFG425W,135
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- BFN38H6327XTSA1
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- BFP183WH6327
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- BFP196WH6327XTSA1
相关库存
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- BFN27E6327HTSA1
- BFN38H6327TR
- BFN39H6327XTSA1
- BFP182E7764
- BFP183E7764
- BFP193E6327
- BFP193WH6327
- BFP196E6327
- BFP196WH6327
- BFP405FH6327
