零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
BF11 | Mounting flange | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福(北京)过程自动化倍加福(北京)过程自动化控制设备有限公司 | PF | |
Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Dual-gate MOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Special | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Dual-gate MOS-FET FEATURES Speciallydesignedforuseat9to12Vsupplyvoltage Shortchanneltransistorwithhighforwardtransfer admittancetoinputcapacitanceratio Lownoisegaincontrolledamplifierupto1GHz Superiorcross-modulationperformanceduringAGC. APPLICATIONS VHFandUHFappl | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1102andBF1102RarebothtwoequaldualgateMOS-FETswhichhaveasharedsourcepinandasharedgate2pin.Bothdeviceshaveinterconnectedsourceandsubstrate;aninternalbiascircuitenablesDCstabilizationandaverygoodcross-modulationperformanceat5Vsupplyvolt | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
视频输出 (Vid)
- 封装形式:
直插封装
- 极限工作电压:
160V
- 最大电流允许值:
0.04A
- 最大工作频率:
150MHZ
- 引脚数:
3
- 可代换的型号:
BF257,BF258,BF259,BF336,BF657,BF658,BF659,2N5058,2N5059,3DA87C,
- 最大耗散功率:
0.75W
- 放大倍数:
- 图片代号:
C-40
- vtest:
160
- htest:
150000000
- atest:
.04
- wtest:
.75
详细参数
- 型号:
BF11
- 制造商:
PHILIPS
- 制造商全称:
NXP Semiconductors
- 功能描述:
Dual-gate MOS-FETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILPS |
1436+ |
SOT-143 |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
NXP |
13+ |
32000 |
特价热销现货库存 |
询价 | |||
MOT/ST/PH |
2339+ |
CAN3 |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
PHI |
23+ |
SOT363 |
12300 |
询价 | |||
NXP |
17+ |
原厂原封 |
1500 |
原装现货热卖 |
询价 | ||
NXP |
16+ |
NA |
8800 |
诚信经营 |
询价 | ||
PHILIPS |
23+ |
SOT-343 |
31000 |
全新原装现货 |
询价 | ||
PHI |
05+ |
原厂原装 |
21051 |
只做全新原装真实现货供应 |
询价 | ||
PHILIPS |
16+ |
SOT-343 |
2490 |
原装现货假一罚十 |
询价 | ||
NXP恩智浦/PHILIPS飞利浦 |
2008++ |
SOT-343SOT-323-4 |
49200 |
新进库存/原装 |
询价 |