BF1005资料datasheet下载库存现货英飞凌-114ic电子网

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BF1005	文件：51.96 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork	SIEMENS Siemens Ltd	SIEMENS
BF1005	文件：252.08 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1005R	文件：252.08 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1005S	文件：252.41 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1005S	文件：52.96 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork	SIEMENS Siemens Ltd	SIEMENS
BF1005SR	文件：252.41 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1005SW	文件：252.41 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1005W	文件：252.08 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1009	文件：36.16 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage9V •Integratedstabilizedbiasnetwork	SIEMENS Siemens Ltd	SIEMENS
BF1009S	文件：51.89 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage9V •Integratedbiasnetwork	SIEMENS Siemens Ltd	SIEMENS
BF1009S	文件：251.35 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstageupto1GHz •Operatingvoltage9V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1009SR	文件：251.35 Kbytes Page：5 Pages	Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstageupto1GHz •Operatingvoltage9V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1009SW	文件：48.45 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode Forlownoise,highgaincontrolled inputstagesupto1GHz Operatingvoltage9V Integratedbiasnetwork	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BF1012	文件：33.42 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage12V •Integratedstabilizedbiasnetwork	SIEMENS Siemens Ltd	SIEMENS
BF1012S	文件：43.75 Kbytes Page：4 Pages	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork	SIEMENS Siemens Ltd	SIEMENS
BF1012W	文件：359.34 Kbytes Page：3 Pages	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) SILICONN-CHANNELMOSFETTETRODE •Forlow-noise,gain-controlledinputstagesupto1GHz •Operatingvoltage12V •IntegratedbiasNetwork	SIEMENS Siemens Ltd	SIEMENS
BF1100	文件：159.54 Kbytes Page：14 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF1100	文件：311.53 Kbytes Page：15 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BF1100R	文件：311.53 Kbytes Page：15 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BF1100R	文件：159.54 Kbytes Page：14 Pages	Dual-gate MOS-FETs DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Sp	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips

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详细参数

型号：
BF1
制造商：
INFINEON
制造商全称：
Infineon Technologies AG
功能描述：
Silicon N-Channel MOSFET Tetrode

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BF1005	INFINEON/英飞凌	24+	SOT-143	45000	热卖优势现货	询价
深圳市凌旭科技有限公司	BF1005	BYD	2016+	SOT23-5	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市凯斯宇科技有限公司	BF1005	INFINEON	2022	SOT143	10768	原厂原装正品,价格超越代理	询价
深圳市博浩通科技有限公司	BF1005		23+	SOT143	19768	原装现货特价热销	询价
深圳市科思奇电子科技有限公司	BF1005	BYD	20+	SOT23-5	3000	支持实单/原盒/原包/原标/进口原装	询价
深圳市宇集芯电子有限公司	BF1005	INFINEON/英飞凌	24+	SOT143	163000	一级代理商现货保证进口原装正品假一罚十价格合理	询价
深圳市诚利顺电子科技有限公司	BF1005	BYD	22+	SOT23-5	6850	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市汇莱威科技有限公司	BF1005	NXP/恩智浦		SOT143	7906200		询价
深圳市昌和盛利电子有限公司	BF1005	INFINEON	23+	SOT-143	7936		询价
深圳市佳鑫美电子科技有限公司	BF1005	Infineon	22+	SOT-143	3600	绝对原装!现货热卖!	询价

更多BF1供应商更新时间2024-6-2 14:14:00

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