| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Plastic Medium?뭁ower Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | TEL TRANSYS Electronics Limited | TEL | ||
Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Silicon PNP Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
Silicon PNP Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor | COMSET | ||
Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | CDIL CDIL | CDIL | ||
Plastic Medium?뭁ower Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •F | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
Plastic Medium?뭁ower Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Silicon PNP Transistors | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC | ||
Silicon PNP Transistors | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
Medium Power Linear and Switching | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Plastic Medium-Power Silicon PNP Darlingtons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
6.0 A SCHOTTKY BARRIER DIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
6.0 A SCHOTTKY BARRIER DIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
4A
- 最大工作频率：
>10MHZ
- 引脚数：
3
- 可代换的型号：
BD262A,BD780,FC50C,2N6036,
- 最大耗散功率：
40W
- 放大倍数：
β>750
- 图片代号：
B-21
- vtest：
80
- htest：
10000100
- atest：
4
- wtest：
40
产品属性
- 产品编号：
BD680
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 30mA，1.5A
- 电流 - 集电极截止（最大值）：
500µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
750 @ 1.5A，3V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
TO-126
- 描述：
TRANS PNP DARL 80V 4A TO126
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
SOT-32 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
STM |
22+ |
SOT-32 |
3000 |
询价 | |||
ST(意法半导体) |
23+ |
SOT-32 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST/ON |
16+ |
TO-126 |
8900 |
全新原装现货,假一罚十 |
询价 | ||
ST |
22+ |
TO-126 |
20000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
STM |
23+ |
SOT-23 |
4600 |
原装现货支持送检 |
询价 | ||
ST MICRO |
2022+ |
NA |
29047 |
原厂原装 |
询价 | ||
06+ |
原厂原装 |
7226 |
只做全新原装真实现货供应 |
询价 | |||
ON |
4800 |
询价 | |||||
STMICRO |
200 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 |
