BSS138

N-Channel50-V(D-S)MOSFET

N-Channel50-V(D-S)MOSFET FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display, ●Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateR

BSS138

50VN-ChannelMOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

BSS138

DirectLogic-LevelInterface:TTL/CMOS

FEATURE ●HighdensitycelldesignforextremelylowRDS(on) ●RuggedandRelaible APPLICATION ●DirectLogic-LevelInterface:TTL/CMOS ●Drivers:Relays,Solenoids,Lamps,Hammers,Display,Memories,Transistors,etc. ●BatteryOperatedSystems ●Solid-StateRelays

BSS138

N-CHANNELLOGICLEVELENHANCEMENTMODE

BSS138

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARTMARKINGDETAIL–SS

BSS138

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BSS138

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

BSS138

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3.5Ω *LowInputCapacitance:40PF *LowOutputCapacitance:12PF *LowThreshole:1.5V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

BSS138

DirectLogic-LevelInterface:TTL/CMOS

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

BSS138

N-CHANNELLOGICLEVELENHANCEMENTMODE

■DESCRIPTION ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. ■FEATURES

BSS138

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

BSS138

50VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •RDS(ON),VGS@2.5V,IDS@100mA=6Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystem

BSS138_NL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod

BSS138A

N-ChannelEnhancementModeFieldEffectTransistor

BSS138AKA

60V,singleN-channelTrenchMOSFET

BSS138BK

60V,360mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. Featuresandbenefits -Logic-levelcompatible -Veryfastswitching -TrenchMOSFETtechn

BSS138BK

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

BSS138BK

60V,360mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ES

BSS138BK

60V,360mAN-channelTrenchMOSFET

BSS138BKAHZG

Nch60V400mASmallSignalMOSFET