FEATURES

• RDS(ON), VGS@10V,IDS@500mA=3Ω

• RDS(ON), VGS@4.5V,IDS@200mA=4Ω

• RDS(ON), VGS@2.5V,IDS@100mA=6Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected

• In compliance with EU RoHS 2002/95/EC directives