零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
InfraredSensorsLineGuide | HONEYWELL-ACCHoneywell Accelerometers 霍尼韦尔霍尼韦尔国际公司 | HONEYWELL-ACC | ||
SiliconPhotodarlington | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | ||
STEREOHEADPHONEPOWERAMPLIFIER(1.5VUSE) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
STEREOHEADPHONEPOWERAMPLIFIER(1.5VUSE) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SILICONPCHANNELMOSTYPE HighSpeedandHighEfficiencyDC−DCConverters LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications Smallfootprintduetosmallandthinpackage Highspeedswitching Smallgatecharge:Qg=52nC(typ.) Lowdrain−sourceONresista | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
FieldEffectTransistorSiliconPChannelMOSType(U-MOS?? LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceON-resistance:RDS(ON)=2.9mΩ(typ.) (VG | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOS) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Lithium-IonSecondaryBatteriesPowerManagementSwitchesNotebookPCs | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SONET/SDHTransceivers TheTQ8105/TQ8106areSONET/SDHtransceiversthatintegratemultiplexing,demultiplexing,SONET/SDHframing,clock-synthesisPLL,andenhancedlineandclockdiagnosticfunctionsintoasinglemonolithicdevice.TheTQ8106isapin-compatibleupgradeoftheTQ8105thatincludesaClockandDataRe | TriQuint TriQuint Semiconductor | TriQuint | ||
SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION TheµPC8106TBandµPC8109TBaresiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellular/cordlesstelephonetransmitterstage.TheµPC8106TBfeaturesimprovedintermodulationandµPC8109TBfeatureslowcurrentconsumption.Fromthesetwoversion,youcanc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
3V,SILICONMMICFREQUENCYUP-CONVERTER DESCRIPTION TheUPC8106TandUPC8109TareL-BandFrequencyUpConvertersmanufacturedusingtheNESATIIIMMICprocess.TheUPC8106TwasdesignedforlowdistortionwhiletheUPC8109Twasdesignedforlowcurrentconsumption.Operationfroma3voltsupplyvoltagemakesthisdeviceidealforhandh | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
3V,SILICONMMICFREQUENCYUP-CONVERTER | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICONRFICHI-IP3FREQUENCYUP-CONVERTERFORWIRELESSTRANSCEIVER | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION TheµPC8106TBandµPC8109TBaresiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellular/cordlesstelephonetransmitterstage.TheµPC8106TBfeaturesimprovedintermodulationandµPC8109TBfeatureslowcurrentconsumption.Fromthesetwoversion,youcanc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICONMMIC2.5GHzFREQUENCYUP-CONVERTERFORWIRELESSTRANSCEIVER DESCRIPTION TheµPC8172TBisasiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforwirelesstransceivertransmitterstage.ThisICismanufacturedusingNEC’s30GHzfmax.UHS0(UltraHighSpeedProcess)siliconbipolarprocess. ThisICisassamecircuitcurrentasconv | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULARTELEPHONE DESCRIPTION TheµPC8163TBisasiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellulartelephonetransmitterstage.TheµPC8163TBhasimprovedintermodulationperformanceandsmallerpackage. TheµPC8163TBismanufacturedusingNEC’s20GHzfTNESATTMlllsiliconbip | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
3VSILICONRFICFREQUENCYUPCONVERTER | CEL California Eastern Laboratories | CEL | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Recommendedoperatingfrequency:fRFout=0.4to2.0GHz,fIFin=100to400MHz •Supplyvoltage:VCC=2.7to5.5V •High-densitysurfacemounting:6-pinsuperminimoldpackage •Lowcurrentconsumption:ICC=9mATYP.@mPC8106TB ICC=5mATYP.@mPC8109TB •Minimizedca | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Highoutputfrequency:fRFout=0.8to2.5GHz •High-densitysurfacemounting:6-pinsuperminimoldpackage •Supplyvoltage:VCC=2.7to3.3V •HigherIP3:OIP3=+10dBm@fRFout=1.9GHz | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
N/A |
22+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
3M |
新 |
5 |
全新原装 货期两周 |
询价 | |||
3M |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
3M |
2023+ |
TSSOP-3.9-16P |
8700 |
原装现货 |
询价 | ||
Bourns Inc. |
24+ |
垂直式,4 PC 引脚 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
Apex |
1824+ |
NA |
16 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
ESAOTE |
D/C09+ |
10000 |
询价 | ||||
N/A |
23+ |
DIP |
1572 |
专业优势供应 |
询价 | ||
DLZ |
22+ |
DIP |
354000 |
询价 | |||
MOLEX |
2000 |
96 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 |
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