首页 >2SK3434(0)-Z-E1>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •LowCiss:Ciss=2100pFTYP. •Built-ing | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4V,ID=24A) ●LowCiss:Ciss=2100pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •LowCiss:Ciss=2100pFTYP. •Built-ing | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •LowCiss:Ciss=2100pFTYP. •Built-ing | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3434isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=20mΩMAX.(VGS=10V,ID=24A) RDS(on)2=31mΩMAX.(VGS=4.0V,ID=24A) •Lo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFET ■Features ●VDSS=60V ●ID=48A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
49300 |
正品授权货源可靠 |
询价 | |||
RENESAS/瑞萨 |
22+ |
TO-220 |
38598 |
郑重承诺只做原装进口货 |
询价 | ||
RENESAS |
2017+ |
TO-263 |
26589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
RENESAS |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
只做原装 |
21+ |
SO-263 |
36520 |
一级代理/放心采购 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SO-263 |
25000 |
代理原装现货,假一赔十 |
询价 | ||
RENESAS |
15+PBF |
TO-263 |
1000 |
现货 |
询价 | ||
RENESAS |
21+ |
SO-263 |
5330 |
原装现货假一赔十 |
询价 | ||
RENESAS/瑞萨 |
SO-263 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
RENESAS/瑞萨 |
23+ |
SO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 |
