| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=6100pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •LowCiss:Ciss=6100pFTY | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3431isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.6mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.9mΩMAX.(VGS=4V,ID=42A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
TO-220 |
货真价实,假一罚十 |
25000 |
询价 | |||
NEC |
22+ |
TO-220 |
40256 |
本公司只做原装进口现货 |
询价 | ||
NEC |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NEC |
08+(pbfree) |
TO-262 |
8866 |
询价 | |||
NEC |
23+ |
T0-262 |
35890 |
询价 | |||
NEC |
23+ |
TO-262 |
7600 |
全新原装现货 |
询价 | ||
23+ |
N/A |
90050 |
正品授权货源可靠 |
询价 | |||
NEC |
2020+ |
TO-262 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
NEC |
2022+ |
TO-262 |
7300 |
原装现货 |
询价 | ||
NEC |
2105+ |
TO-262 |
12000 |
原装正品 |
询价 |
