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2SK3113B	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-S15-AY	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B-S15-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-S27-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-ZK-E1-AY	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B-ZK-E1-AY	文件：1.086 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SK3113B-ZK-E1-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113B-ZK-E2-AY	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A)	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113B-ZK-E2-AY	文件：347.16 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113BisN-channelMOSFETdevicethatfeaturesalowgatechargeandexcellentswitching characteristics,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(o	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113	文件：145.2 Kbytes Page：8 Pages	SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SK3113	文件：45.43 Kbytes Page：1 Pages	MOSFieldEffectTransistor Features Lowon-stateresistanceRDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) Lowgatecharge QG=9nCTYP.(VDD=450V,VGS=10V,ID=2.0A) Gatevoltagerating±30V Avalanchecapabilityratings	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SK3113	文件：398.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SK3113	文件：267.06 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113-Z	文件：267.06 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeatures alowgatechargeandexcellentswitchingcharacteristic,and designedforhighvoltageapplicationssuchasswitching powersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SK3113-Z	文件：331.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SK3113-Z	文件：1.07641 Mbytes Page：9 Pages	PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
2SK3113-Z	文件：145.2 Kbytes Page：8 Pages	SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3113isN-channelDMOSFETdevicethatfeaturesalowgatechargeandexcellentswitchingcharacteristic,anddesignedforhighvoltageapplicationssuchasswitchingpowersupply,ACadapter. FEATURES •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC

详细参数

型号：
2SK3113B
制造商：
Renesas Electronics Corporation

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SK3113B	NEC	08+(pbfree)	TO-251	8866		询价
深圳市莱克讯科技有限公司	2SK3113B	NEC	2017+	TO-251	65895	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳诚思涵科技有限公司	2SK3113B	NEC	17+	TO-251	60000	保证原装进口现货可开17%增值税发票	询价
深圳市科恒伟业电子有限公司	2SK3113B	NEC	1822+	TO-251	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市百视威讯电子科技有限公司	2SK3113B		23+	N/A	90350	正品授权货源可靠	询价
上海市鑫鸿达电子	2SK3113B	RENESAS/瑞萨	2022+		1790	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	2SK3113B	NEC	21+	TO-251	65200	一级代理/放心采购	询价
深圳市艾宇特电子科技有限公司	2SK3113B	NEC	2048+	TO-251	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市鼎欣微电子有限公司	2SK3113B	RENESAS/瑞萨	21+	TO251	19000	只做正品原装现货	询价
深圳市仟禧电子有限公司	2SK3113B	RENESAS/瑞萨	22+	TO-251	20000	保证原装正品,假一陪十	询价

更多2SK3113B供应商更新时间2024-5-21 16:30:00

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