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2SK30651000中文资料PDF规格书
2SK30651000规格书详情
Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
Structure
Silicon N-channel
MOS FET transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ROHM/罗姆 |
20+ |
SOT-89-3 |
65300 |
一级代理/放心购买! |
询价 | ||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ROHM |
2008++ |
SOT-89 |
6200 |
新进库存/原装 |
询价 | ||
ROHM |
2022 |
SOT89 |
84 |
原厂原装正品,价格超越代理 |
询价 | ||
ROHM |
1017 |
291 |
进口原装-真实库存-价实 |
询价 | |||
ROHM |
19+ |
SOT89 |
59543 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
ROHM/罗姆 |
1925+ |
MPT3 |
45000 |
真实库存!原装特价!实单必成交! |
询价 | ||
ROHM |
21+ |
SOT-89 |
16500 |
进口原装正品现货 |
询价 | ||
ROHM |
23+ |
SOT-89 |
10000 |
原装正品,假一罚十 |
询价 |