| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFieldEffectTransistor Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=23mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss=4800pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
P-ChannelMOSFET ■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
21+ |
TO-220 |
50 |
原装现货假一赔十 |
询价 | ||
NEC/Renesas Electronics Americ |
21+ |
TO-220 |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NEC |
22+ |
TO-220 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
NEC |
TO-220 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
NEC |
23+ |
TO-220 |
2550 |
原厂原装正品 |
询价 | ||
NEC |
2023+ |
TO-220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
NEC |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS |
2022+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
12850 |
正品授权货源可靠 |
询价 | |||
RENESAS/瑞萨 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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