| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SJ603-ZJ | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | |
2SJ603-ZJ | P-Channel MOSFET ■Features ●VDS(V)=-60V ●ID=-25A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | |
2SJ603-ZJ | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
MOSFieldEffectTransistor Features ●Lowon-resistance RDS(on)1=48mMAX.(VGS=-10V,ID=-13A) RDS(on)2=75mMAX.(VGS=-4.0V,ID=-13A) ●LowCiss:Ciss=1900pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ603isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=48mΩMAX.(VGS=−10V,ID=−13A) RDS(on)2=75mΩMAX.(VGS=−4.0V,ID=−13A) •Lowinputcapacitance: Ciss=1 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
详细参数
- 型号：
2SJ603-ZJ
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
询价 | ||
NEC |
08+(pbfree) |
TO-263 |
8866 |
询价 | |||
NEC |
23+ |
TO-263 |
11755 |
全新原装 |
询价 | ||
23+ |
N/A |
59210 |
正品授权货源可靠 |
询价 | |||
NEC |
23+ |
TO-263 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
NEC |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
NEC |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
NEC |
2022+ |
TO-263 |
7300 |
原装现货 |
询价 | ||
NEC |
2105+ |
TO-263 |
12000 |
原装正品 |
询价 |
相关规格书
更多- 2SJ604
- 2SJ604-S
- 2SJ604-Z-AZ
- 2SJ604-ZJ-E1-AZ
- 2SJ605-AZ
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相关库存
更多- 2SJ604-AZ
- 2SJ604-Z
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- 2SJ605
- 2SJ605-S
- 2SJ605-Z-AZ
- 2SJ605-ZJ-E1-AZ
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- 2SJ610_09
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- 2SJ635-TL-E
- 2SJ637
- 2SJ645
- 2SJ646
- 2SJ647
- 2SJ648
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