| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SD258 | NPN Transistor | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | |
Color TV Horizontal Deflection Output Applications ColorTVHorizontalDeflectionOutputApplications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. ·On-chipdamperdiode. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Highreliability ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput | SAVANTIC Savantic, Inc. | SAVANTIC | ||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-3PMLpackage ·Highspeed ·Highbreakdownvoltage ·Highreliability ·Built-indamperdiode APPLICATIONS ·ColorTVhorizontaldeflectionoutput | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Color TV Horizontal Deflection Output Applications Features ·Highspeed. ·Highbreakdownvoltage(VCBO=1500V). ·Highreliability(AdoptionofHVPprocess). ·AdoptionofMBITprocess. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
isc Silicon NPN Power Transistor DESCRIPTION •HighBreakdownVoltage- :VCBO=1500V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •ColorTVhorizontaldeflectionoutputapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES •LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=0.5A/25mA) •HighDCCurrentGain hFE=150to600(@VCE=2.0V,lC=0.5A) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SILICON TRANSISTOR AUDIOFREQUENCYAMPLIFIER,SWITCHING NPNSILICONEPITAXIALTRANSISTORS FEATURES ·LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=0.5A/25mA) ·HighDCCurrentGain hFE=150to600(@VCE=2.0V,lC=0.5A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES •LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=1.0A/50mA) •HighDCCurrentGain hEF=150to600(@VCE=2.0V,lC=1.0A) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:5A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
isc Silicon NPN Power Transistor DESCRIPTION •HighCollectorCurrent-IC=5A •LowSaturationVoltage- :VCE(sat)=0.15V(Max)@IC=1A,IB=50mA •HighDCCurrentGain- :hFE=150~600@IC=1A APPLICATIONS •Designedforaudiofrequencyamplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TO-126 Plastic-Encapsulate Transistors Features LowVce HighDCCurrentGain | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Silicon NPN transistor in a TO-126F Plastic Package. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowsaturationvoltage,highDCcurrentgain. Applications Audiofrequencyamplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
NPN Silicon Epitaxial Power Transistor FEATURES •LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=1.0A/50mA) •HighDCCurrentGain hEF=150to600(@VCE=2.0V,lC=1.0A) | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:5A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighDCCurrentGain | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
SILICON TRANSISTOR AUDIOFREQUENCYAMPLIFIER,SWITCHING NOPNSILICONEPITAXIALTRANSISTORS FEATURES ·LowVCE(sat) VCE(sat)=0.15VMax(@lC/lB=1.0A/50mA) ·HighDCCurrentGain hEF=150to600(@VCE=2.0V,lC=1.0A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
TO-126 Plastic-Encapsulate Transistors Features LowVce HighDCCurrentGain | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) HIGHPOWERSWITCHINGAPPLICATIONS HAMMERDRIVE,PULSEMOTORDRIVEAPPLICATIONS •HighDCCurrentGain :hFE=2000(Min.)(VCE=3V,IC=3A) •LowSaturationVoltage:VCE(sat)=1.5V(Max.)(IC=3A) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV) 2SD2586,D2586 HorizontalDeflectionOutputForColorTV. 1.HighVoltage:Vcbo=1500V 2.LowSaturationVoltage=Vce(sat)=5V(Max.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
110V
- 最大电流允许值：
4A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
2
- 可代换的型号：
BD241C,BD243C,BD539D,BD581,BD591,BD955,BDY79,3DK205C,
- 最大耗散功率：
25W
- 放大倍数：
- 图片代号：
E-8
- vtest：
110
- htest：
999900
- atest：
4
- wtest：
25
详细参数
- 型号：
2SD258
- 制造商：
ON Semiconductor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
02+ |
TO-66 |
1633 |
询价 | |||
23+ |
TO |
20000 |
正品原装货价格低qq:2987726803 |
询价 | |||
SANKEN |
05+ |
原厂原装 |
2051 |
只做全新原装真实现货供应 |
询价 | ||
TOSHIBA |
11+ |
400 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | |||
S.K |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
16+ |
TO-126 |
1602 |
原装现货假一罚十 |
询价 | |||
SANYO |
23+ |
TO-3 |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
询价 | ||
长电 |
2020+ |
TO-126 |
8400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
24+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 | |||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
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