零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
POWER TRANSISTORS(3A,60V,30W) 3AMPEREPOWERTRANSISTOR60VOLT30WATTS | MOSPEC MOSPEC | |||
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) LOWFREQUENCYPOWERAMPLIFIER Complementto2SB507 | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE PlanarRtpeSiliconTransistorForAFPOWERAmplifierUse | SANYOSanyo 三洋三洋电机株式会社 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.75W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB507 ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedfortheoutputstageof15Wto25WAFpoweramplifier | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneral-purposeamplifierandswitchingapplications. | DCCOMDc Components 直流元件直流元件有限公司 | |||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Complementtotype2SB507 ·Lowcollectorsaturationvoltage APPLICATIONS ·Designedfortheoutputstageof15Wto25WAFpoweramplifier | SAVANTIC Savantic, Inc. | |||
NPN Silicon Epitaxial Power Transistor Features: *DCCurrentGainhFE=40-320@IC=1.0A *LowVCE(sat)≤1.0V(MAX)@IC=2.0A,IB=0.2A *ComplememtarytoNPN2SB507 | WEITRONWEITRON 威堂電子科技 | |||
TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●LowCollector-EmitterSaturationVoltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A ●DCCurrentGainhFE=40~320@IC=1A ●ComplementraytoPNP2SB507 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
TRANSISTOR (NPN) FEATURES Powerdissipation PCM:1.75W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
Silicon NPN transistor in a TO-220 Plastic Package. Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LowCurrentLowVoltage. Applications Lowfrequencypoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-220-3L Plastic-Encapsulate Transistors FEATURES LowCollector-EmitterSaturationVoltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DCCurrentGainhFE=40~320@IC=1A ComplementraytoPNP2SB507 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION TheUTC2SD313isdesignedforuseingeneralpurposeamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
开关管 (S)_功率放大 (L)
- 封装形式:
直插封装
- 极限工作电压:
60V
- 最大电流允许值:
3A
- 最大工作频率:
8MHZ
- 引脚数:
3
- 可代换的型号:
BDY241A,BD243A,BD535,BD539A,BD577,BD935,D651,3DA4306,3DD30A,
- 最大耗散功率:
30W
- 放大倍数:
- 图片代号:
B-90
- vtest:
60
- htest:
8000000
- atest:
3
- wtest:
30
详细参数
- 型号:
2SD31
- 制造商:
SANYO
- 制造商全称:
Sanyo Semicon Device
- 功能描述:
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHARD |
2017+ |
TO-220 |
35556 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
47 |
询价 | ||||||
SANYO |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
ISKRA |
16+ |
原厂封装 |
1700 |
原装现货假一罚十 |
询价 | ||
进口厂家 |
23+ |
TO-220 |
6000 |
特价库存 |
询价 | ||
FSC |
23+ |
TO-220 |
20000 |
原装正品,假一罚十 |
询价 | ||
FSC |
2020+ |
TO220 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
长电 |
22+23+ |
TO-220-3L |
24803 |
绝对原装正品全新进口深圳现货 |
询价 | ||
23+ |
N/A |
35700 |
正品授权货源可靠 |
询价 |