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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2SD1899	文件：56.33 Kbytes Page：1 Pages	TO-252Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited	TEL
2SD1899	文件：634.21 Kbytes Page：4 Pages	NPNPLASTICENCAPSULATETRANSISTORS NPNPLASTICENCAPSULATETRANSISTORS P/bLead(Pb)-Free	WEITRONWEITRON 威堂電子科技	WEITRON
2SD1899	文件：930.17 Kbytes Page：6 Pages	SiliconNPNtransistorinaTO-252PlasticPackage. Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
2SD1899	文件：279 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SD1899	文件：862.16 Kbytes Page：4 Pages	TO-252-2LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
2SD1899-K	文件：661.39 Kbytes Page：3 Pages	NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
2SD1899L	文件：1.08974 Mbytes Page：6 Pages	SiliconNPNtransistorinaTO-126FPlasticPackage. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
2SD1899-L	文件：661.39 Kbytes Page：3 Pages	NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
2SD1899-M	文件：661.39 Kbytes Page：3 Pages	NPNSiliconEpitaxialTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
2SD1899-Z	文件：997.37 Kbytes Page：3 Pages	TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat)	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
2SD1899-Z	文件：291.06 Kbytes Page：6 Pages	NPNSILICONEPITAXIALTRANSISTORMP-3 DESCRIPTION 2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFEhFE=100to400 •LowVCE(sat)VCE(sat)=0.3VCE	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SD1899-Z	文件：1.35878 Mbytes Page：7 Pages	SILICONPOWERTRANSISTOR DESCRIPTION The2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFE:hFE=100to400 •LowVCE(sat):VCE(sat)≤0.25V	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SD1899-Z	文件：275.97 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SD1899-Z	文件：56.33 Kbytes Page：1 Pages	TO-252Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited	TEL
2SD1899-Z	文件：56.9 Kbytes Page：1 Pages	Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited	TEL
2SD1899-Z	文件：43.58 Kbytes Page：2 Pages	NPNSiliconEpitaxialTransistor Features ●LowVCE(sat). ●HighhFE.	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN

详细参数

型号：
2SD1899-AZ-L
制造商：
Renesas Electronics
功能描述：
Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	2SD1899-AZ-M	UTG	2021+	251-252	8999999	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳芯力源电子科技有限公司	2SD1899-AZ其他被动元件	RENESAS/瑞萨	23+		5177	深圳现货	询价
深圳市威尔健半导体有限公司	2SD1899IC	CJ/长电	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	2SD1899IC	CJ/长电	2022	TO-252	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市鹏和科技有限公司	2SD1899-K	国产	24+	TO-251	5000	只做原装公司现货	询价
深圳市百视威讯电子科技有限公司	2SD1899-K		23+	N/A	85700	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	2SD1899-K	NEC	23+	TO-251	37650	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	2SD1899-K	NEC	2020+	TO-252	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市国宇半导体科技有限公司	2SD1899-K	NEC	23+	TO-251	10000	公司只做原装正品	询价
深圳市创盛芯科技有限公司	2SD1899-K	国产	22+	TO-251	3000	原装现货假一赔十	询价

更多2SD1899-AZ-L供应商更新时间2024-5-22 16:23:00

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