2SD1691-Y

NPN Plastic-Encapsulate Transistors

Features •LowCollector-EmitterSaturationVoltage •LargeCollectorCurrent •HighPowerDissipation •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Hal

2SD1691-Y-BP

包装：卷带（TR） 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5A TO126

2SD1691

NPNSILICONPOWERTRANSISTOR

DESCRIPTION The2SD1691isalowVCE(sat)transistorwhichhasalargecurrentcapabilityandwideSOA. ItissuitableforDC-DCconverter,ordriverofsolenoidormotor. FEATURES ●LowCollectorSaturationVoltage. VCE(sat)=0.1VTYP.(@IC/IB=2.0A/0.2A) ●LargeCurrent. IC(DC)

2SD1691

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT ■FEATURES *HighPowerDissipation *Complementaryto2SB1151

2SD1691

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB1151 ·Lowsaturationvoltage ·Hightotalpowerdissipation:PT=1.3W ·LargecurrentcapabilityandwideSOA APPLICATIONS ·DC-DCconverter ·Driverofsolenoidormotor

2SD1691

SILICONPOWERTRANSISTOR

FEATURES •LargecurrentcapacityandlowVCE(sat): IC(DC)=5.0A,IC(pulse)=8.0A VCE(sat)=0.1VTYP.(@IC=2.0A,IB=0.2A) •LargepowerdissipationTO-126typepowertransistor PT=1.3W(@Ta=25°C),20W(@Tc=25°C) •Complementarytransistor:2SB1151

2SD1691

LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT

2SD1691

Itisintentedforuseinpoweramplifierandswitchingapplications.

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

2SD1691

SiliconNPNPowerTransistors

2SD1691

iscSiliconNPNPowerTransistor

DESCRIPTION ·HighCollectorCurrent-IC=5A ·LowCollectorSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=2A ·ComplementtoType2SB1151 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforuseinDC-DCconverter,ordriverofsol

2SD1691

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpower amplifierandswitchingapplications.

2SD1691-G

NPNPlastic-EncapsulateTransistors

Features •LowCollector-EmitterSaturationVoltage •LargeCollectorCurrent •HighPowerDissipation •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Hal

2SD1691-O

NPNPlastic-EncapsulateTransistors

Features •LowCollector-EmitterSaturationVoltage •LargeCollectorCurrent •HighPowerDissipation •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Hal

2SD1691T

NPNSiliconEpitaxialPowerTransistor

NPNSiliconEpitaxialPowerTransistor ForLow-FrequenceyPowerAmplifiersand Mid-SpeedSwitching Thetransistorissubdividedintothreegroups,M,Land K,accordingtoitsDC-DCcurrentgain.

2SD1691TF

SiliconNPNPowerTransistor

ST2SD1691T

NPNSiliconEpitaxialPowerTransistor

NPNSiliconEpitaxialPowerTransistor ForLow-FrequenceyPowerAmplifiersand Mid-SpeedSwitching Thetransistorissubdividedintothreegroups,M,Land K,accordingtoitsDC-DCcurrentgain.