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2SC5331

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGHRESOLUTIONDISPLAYTV,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC5332

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGHRESOLUTIONDISPLAY,COLORTV,HIGHSPEEDSWITCHINGAPPLICATIONS ●HighVoltage:VCEO-1700V ●LowSaturationVoltage:VCE(sat)=3V(Max.) ●HighSpeed:tf=0.15μs(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SC5335

Silicon NPN epitaxial planer type(For low-frequency output amplification)

■Features ●HighfowardcurrenttransferratiohFE. ●LowcollectortoemittersaturationvoltageVCE(sat).

PanasonicPanasonic Corporation

松下松下电器

Panasonic

2SC5336

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NPNEPITAXIALSILICONTRANSISTORHIGHFREQUENCYLOWDISTORTIONAMPLIFIER FEATURES •Highgain|S21|2=12dBTYP,@f=1GHz,VCE=10V,Ic=20mA •Newpowermini-moldpackageversionofa4-pintypegain-improvedonthe2SC3357

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SC5336

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWDISTORTIONAMPLIFIER4-PINPOWERMINIMOLD FEATURES •Highgain:|S21e|2=12dBTYP.@VCE=10V,IC=20mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromtheNE85634/2SC3357

CEL

California Eastern Laboratories

CEL

2SC5336

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWDISTORTIONAMPLIFIER4-PINPOWERMINIMOLD FEATURES •Highgain:|S21e|2=12dBTYP.@VCE=10V,IC=20mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromthe2SC3357

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5336-T1

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWDISTORTIONAMPLIFIER4-PINPOWERMINIMOLD FEATURES •Highgain:|S21e|2=12dBTYP.@VCE=10V,IC=20mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromthe2SC3357

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5337

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

HIGHFREQUENCYLOWDISTORTIONAMPLIFIER DESCRIPTION The2SC5337isahigh-frequencytransistordesignedforalowdistortionandlownoiseamplifierontheVHFtoUHFband,whichissuitablefortheCATV,tele-communication,andsuch. FEATURES •Lowdistortion IM2=59dBTYP.@VCE=10V,

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SC5337

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromthe2SC4536

CEL

California Eastern Laboratories

CEL

2SC5337

NPN Silicon RF Transistor for High-Frequency

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromtheNE46134/2SC45

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5337-AZ

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromthe2SC4536

CEL

California Eastern Laboratories

CEL

2SC5337-AZ

NPN Silicon RF Transistor for High-Frequency

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromtheNE46134/2SC45

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5337-T1

NPN Silicon RF Transistor for High-Frequency

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromtheNE46134/2SC45

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5337-T1

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromthe2SC4536

CEL

California Eastern Laboratories

CEL

2SC5337-T1-AZ

NPN Silicon RF Transistor for High-Frequency

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromtheNE46134/2SC45

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5337-T1-AZ

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES •Lowdistortion:IM2=59.0dBTYP.,IM3=82.0dBTYP.@VCE=10V,IC=50mA •Lownoise NF=1.5dBTYP.@VCE=10V,IC=50mA,f=500MHz NF=2.0dBTYP.@VCE=10V,IC=50mA,f=1GHz •4-pinpowerminimoldpackagewithimprovedgainfromthe2SC4536

CEL

California Eastern Laboratories

CEL

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The2SC5338isdesignedforalowdistortionandlownoiseRFamplifierwithanoperationonthelowsupplyvoltage(VCE=5V).ThislowdistortioncharacteristicsissuitablefortheCATV,tele-communication,andsuch. FEATURES •Highgain|S21|2=10dBTYP.,@VCE=5V,I

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2SC5338

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWDISTORTIONAMPLIFIER4-PINPOWERMINIMOLD FEATURES •Highgain:S21e2=10dBTYP.@VCE=5V,IC=50mA,f=1GHz •Lowdistortion,lowvoltage:IM2=−55dBTYP.,IM3=−76dBTYP.@VCE=5V,IC=50mA,Vin=105dBµV/75Ω •4-pinpower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5338-T1

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPNSILICONRFTRANSISTORFORHIGH-FREQUENCYLOWDISTORTIONAMPLIFIER4-PINPOWERMINIMOLD FEATURES •Highgain:S21e2=10dBTYP.@VCE=5V,IC=50mA,f=1GHz •Lowdistortion,lowvoltage:IM2=−55dBTYP.,IM3=−76dBTYP.@VCE=5V,IC=50mA,Vin=105dBµV/75Ω •4-pinpower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SC5339

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORMEDIUM RESOLUTIONDISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1500V LowSaturationVoltage:VCE(sat)=5V(Max.) HighSpeed:tf=0.2µs(Typ.) Bult−inDamperType CollectorMetal(Fin)isFullyCovered

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

晶体管资料

  • 型号:

    2SC5332

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    行输出 (HA)

  • 封装形式:

    直插封装

  • 极限工作电压:

    1700V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    2SC4532,2SC4880,

  • 最大耗散功率:

    200W

  • 放大倍数:

  • 图片代号:

    B-62

  • vtest:

    1700

  • htest:

    999900

  • atest:

    10

  • wtest:

    200

详细参数

  • 型号:

    2SC533

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    NPN TRIPLE DIFFUSED MESA TYPE(HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

供应商型号品牌批号封装库存备注价格
TOSHIBA
23+
TO-3PL
5000
原装正品,假一罚十
询价
TOS
23+
TO-3PL
3000
专做原装正品,假一罚百!
询价
23+
N/A
85100
正品授权货源可靠
询价
TOS
1746+
TO3PL
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
TOSHIBA/东芝
23+
TO-3PL
90000
只做原厂渠道价格优势可提供技术支持
询价
TOSHIBA/东芝
2021+
TO-3PL
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TOSHIBA/东芝
22+
TO-3PL
6000
十年配单,只做原装
询价
TOSHIBA
2022+
SDM/DIP
7300
原装现货
询价
TOSHIBA/东芝
2021+
TO-3PL
19330
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
isc
2024
TO-3PL/TO-264
14000
国产品牌isc,可替代原装
询价
更多2SC533供应商 更新时间2024-4-27 15:36:00