2SC2001-M

NPN Silicon Plastic-Encapsulate Transistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

2SC2001-M

NPN Silicon Plastic-Encapsulate Transistor

2SC2001-M_13

NPN Silicon Plastic-Encapsulate Transistor

2SC2001-M-AP

包装：带盒（TB） 封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 0.7A TO92

2SC2001

TO-92Plastic-EncapsulateTransistors

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

2SC2001

MediumPowerAmplifiersandSwitches

MediumPowerAmplifiersandSwitches TO-92Plastic-EncapsulateTransistors

2SC2001

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC2001

NPNPlasticEncapsulatedTransistor

FEATURES ●HighhFEandlowVCE(sat) hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ)

2SC2001

NPNSILICONTRANSISTOR

DESCRIPTION The2SC2001isdesignedforuseinoutputstateofportableRADIOandcassettetypetaperecorder,generalpurposeapplications.

2SC2001

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplications.

2SC2001

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES •HighhFEandlowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

2SC2001

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Hightotalpowerdissipation,lowVCE(sat)andhighhFE. Applications Outputstageofportableradioandcassettetypetaperecorder,generalpurposeapplications.

2SC2001

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFEandLowVCE(sat) hFE(IC=100mA):200(Typ) VCE(sat)(700mA):0.2V(Typ)

2SC2001

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:0.6W(Tamb=25℃) Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SC2001-K

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

2SC2001-K

NPNSiliconPlastic-EncapsulateTransistor

2SC2001-L

NPNSiliconPlastic-EncapsulateTransistor

Features ▪Capableof0.6WattsofPowerDissipation. ▪Collector-current0.7A ▪Collector-baseVoltage30V ▪Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ▪EpoxymeetsUL94V-0flammabilityrating ▪MoisureSensitivityLevel1 ▪Marking:C2001 ▪LeadFreeFinish/Rohs

2SC2001-L

NPNSiliconPlastic-EncapsulateTransistor

ST2SC2001

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintothreegroups,O,Y andG,accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.